A detailed microscopic calculation and experimental measurements of the optical gain from a (GaIn)Sb structure are presented. For a given excitation density, the gain in the (GaIn)Sb material system considerably exceeds that of a comparable equivalent (GaIn)As/GaAs structure. The physical reasons for this high gain are analyzed and attributed mostly to band structure effects
The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theor...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room...
This article gives an,overview of the microscopic theory,theory used to quantitatively model a wide ...
Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devic...
Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devic...
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs...
Abstract — We have measured the absorption, gain and spon-taneous emission spectra of GaInNAsSb (3.3...
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs...
Automated experimental setups for electrical and optical characterisation, MOVPE growth, laser diode...
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs...
Valence-band structures, hole effective masses and optical gain have been calculated for strained-la...
A new gain mechanism active in certain quantum well laser diode structures is demonstrated and expla...
We have measured the gain spectrum of an optically pumped 40A ZnCdSe-ZnSe multiple quantum well. Our...
Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devic...
InGaAs/InGaAsP-multi-quantum-well-layers are preferably used as the active region in long-wavelength...
The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theor...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room...
This article gives an,overview of the microscopic theory,theory used to quantitatively model a wide ...
Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devic...
Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devic...
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs...
Abstract — We have measured the absorption, gain and spon-taneous emission spectra of GaInNAsSb (3.3...
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs...
Automated experimental setups for electrical and optical characterisation, MOVPE growth, laser diode...
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs...
Valence-band structures, hole effective masses and optical gain have been calculated for strained-la...
A new gain mechanism active in certain quantum well laser diode structures is demonstrated and expla...
We have measured the gain spectrum of an optically pumped 40A ZnCdSe-ZnSe multiple quantum well. Our...
Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devic...
InGaAs/InGaAsP-multi-quantum-well-layers are preferably used as the active region in long-wavelength...
The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theor...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room...
This article gives an,overview of the microscopic theory,theory used to quantitatively model a wide ...