This letter presents the design and characterization of a 220 GHz microstrip monolithic microwave integrated circuit single-ended resistive mixer in a 0.1 µm GaAs mHEMT technology. A conversion loss as low as 8.7 dB is obtained, limited by the available local oscillator (LO) power (1.5 dBm) in the measurement setup. The radio frequency (RF) bandwidth is also limited by the measurement setup, but the mixer demonstrates a flat response over the measured 200 to 220 GHz frequency range. Furthermore, measured intermediate frequency bandwidth, 1-dB input compression point, LO-to-RF isolation, and reflection coefficients are presented and discussed
This paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion l...
A broadband highly linear X-band mixer in AlGaN/GaN monolithic microwave integrated circuit technolo...
Using the 0.15 µm GaAs mHEMT process from WIN semiconductors, two 60 GHz down-conversion mixers have...
This paper presents the design and characterization of two resistive mixers integrated with a double...
This paper presents the design and characterization of two resistive mixers integrated with a double...
A novel balanced 210 GHz mixer MMIC with a measured IF bandwidth of more than 50 GHz and an RF bandw...
This letter presents the design and characterization of a 220 GHz microstrip single-chip receiver mo...
The objective of this work has been to design and characterize microwave and millimeter-wave compone...
This letter presents the design and characterization of a fully integrated 60-GHz single-ended resis...
We demonstrate the first active mixer monolithic microwave integrated circuit (MMIC) with Positive c...
This thesis treats the design and characterization of different mixer and multifunctional monolithic...
A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tes...
In this paper the design of resistive PHEMT mixers and their applications in fully integrated millim...
The development of single-chip transmitters and receivers is hindered by several obstacles. The main...
This letter presents the design, fabrication and characterization of the first graphene based monoli...
This paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion l...
A broadband highly linear X-band mixer in AlGaN/GaN monolithic microwave integrated circuit technolo...
Using the 0.15 µm GaAs mHEMT process from WIN semiconductors, two 60 GHz down-conversion mixers have...
This paper presents the design and characterization of two resistive mixers integrated with a double...
This paper presents the design and characterization of two resistive mixers integrated with a double...
A novel balanced 210 GHz mixer MMIC with a measured IF bandwidth of more than 50 GHz and an RF bandw...
This letter presents the design and characterization of a 220 GHz microstrip single-chip receiver mo...
The objective of this work has been to design and characterize microwave and millimeter-wave compone...
This letter presents the design and characterization of a fully integrated 60-GHz single-ended resis...
We demonstrate the first active mixer monolithic microwave integrated circuit (MMIC) with Positive c...
This thesis treats the design and characterization of different mixer and multifunctional monolithic...
A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tes...
In this paper the design of resistive PHEMT mixers and their applications in fully integrated millim...
The development of single-chip transmitters and receivers is hindered by several obstacles. The main...
This letter presents the design, fabrication and characterization of the first graphene based monoli...
This paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion l...
A broadband highly linear X-band mixer in AlGaN/GaN monolithic microwave integrated circuit technolo...
Using the 0.15 µm GaAs mHEMT process from WIN semiconductors, two 60 GHz down-conversion mixers have...