Integrierter Polarisationssensor

WO 2009112174 A1 UPAB: 20090928 NOVELTY - The sensor has a polarizing filter structure (32) provided with two structured metal layers (33-1, 33-2). The filter structure and an optoelectronic sensor (31) e.g. photodiode, are integrated on a semiconductor substrate (36). The metal layers include two lateral arrangements of two openings with large lateral dimensions in horizontal and vertical directions, respectively, where one of the openings is arranged at a distance to another opening. The metal layers include lateral arrangements of non-convex openings having different sizes in the directions. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for producing a polarization sensor (2) a method for polarizing an electromagnetic radiation. USE - Integrated polarization sensor for use in a polarization image sensor that is utilized in a receiving system of a driver assistance system for detecting an elliptically polarized light. ADVANTAGE - The utilization of the structured metal layers increases polarization contrast of the polarization sensor at a constant structure period, without requiring a fine structure that is not manufactured in complementary metal oxide semiconductor technology