Verfahren zur Strukturierung einer Nutzschicht eines Substrats

US 20090303563 A1 UPAB: 20100101 NOVELTY - An intermediate layer (130) is formed between the carrier layer (120) and device layer (110). The intermediate layer is structured for exposing the surface of the carrier layer facing the device layer. The thickness of the device layer is reduced to predetermined thickness (126) at positions where the intermediate layer is removed. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) method for producing micromechanical structure; and (2) micromechanical structure. USE - Method for structuring device layer of substrate e.g. bonded silicon on insulator (BSOI) wafer used in micromechanical structure (claimed) for data acquisition microsystem e.g. one-dimensional scanner, two-dimensional scanner and microscopy, data output microsystem e.g. laser display, laser projector, laser printer and illuminator, optical path manipulation microsystem e.g. spectrometer and path length modulator, pressure, acceleration and viscosity sensors and micromechanical gear element (all claimed) e.g. gear wheel or clock anchor. ADVANTAGE - The thickness of the device layer is reduced to predetermined thickness at positions where the intermediate layer is removed without necessitating lithography process and expensive control process