Kantenemittierender Halbleiterlaser

WO 2010057955 A2 UPAB: 20100609 NOVELTY - The laser has a semiconductor body (1) including a wave guide area (2) with lower wave guide and lower cover layers (3a, 4a), an active layer (5) for generating laser radiation, upper wave guide and upper cover layers (4b, 3b). The area includes a structured area (6) for mode selection, and a scattering loss of lateral base laser radiation mode is less than radiation of higher laser modes. A trench (7) extends from an upper side of the body into the upper cover layer, and is deeply moved such that deepest position of the trench is not greater than 300 nm of the upper cover layer. USE - Edge-centering semiconductor laser i.e. board area laser. ADVANTAGE - The laser is designed with the high beam quality and high output power, and ensures high optical performance from an edge emitter without exceeding the critical power density