Add to ORKGA new F-2 gas mixture was evaluated as a substitute for conventional cleaning gases such as, NF3, C2F6, and CF4, in a CVD chamber. The new mixture was compatible with the equipment used and improvement was seen in the etch rate as well as a reduction in the amount of gas needed to complete the clean
A study of the etch characteristics of a thermally grown silicon dioxide etch in RITEs 2406 PLASMATR...
It has been reported that SO_2 and NO_x in flue gas can be removed by corona discharge and that puls...
Chemical dry etching of Si by Ar/CF$_4$ gas mixtures has been studied using a discharge-flow apparat...
F2 gas mixtures offer ideal properties to be employed as chamber cleaning gas: low dissociation ener...
The target of this work was to find viable alternative CVD-cleaning gas mixtures for the semiconduct...
The gases used in industrial cleaning processes are considered greenhouse gases with a high global w...
Etch rates for GaAs, tungsten, and photores is t were compared us ing CF4, CF4 + N2, and SF ~ + N2 ...
A discharge-flow type of chemical dry etching apparatus was developed in order to study the etching ...
Four different F{sub 2}-based gases (SF{sub 6}, NF{sub 3}, PF{sub 5}, and BF{sub 3}) were examined f...
The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very ...
Abstract Sulphur hexafluoride (SF6) is a potent greenhouse gas used in high voltage accelerators. As...
In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typi...
Clean mode chamber condition controlling provides a good method to improve Al etch defect performanc...
The suitability of different plasma etch models based on various plasma chemistry has been evaluated...
CVD processes are important techniques for the production of various microelectronic and tool coatin...
A study of the etch characteristics of a thermally grown silicon dioxide etch in RITEs 2406 PLASMATR...
It has been reported that SO_2 and NO_x in flue gas can be removed by corona discharge and that puls...
Chemical dry etching of Si by Ar/CF$_4$ gas mixtures has been studied using a discharge-flow apparat...
F2 gas mixtures offer ideal properties to be employed as chamber cleaning gas: low dissociation ener...
The target of this work was to find viable alternative CVD-cleaning gas mixtures for the semiconduct...
The gases used in industrial cleaning processes are considered greenhouse gases with a high global w...
Etch rates for GaAs, tungsten, and photores is t were compared us ing CF4, CF4 + N2, and SF ~ + N2 ...
A discharge-flow type of chemical dry etching apparatus was developed in order to study the etching ...
Four different F{sub 2}-based gases (SF{sub 6}, NF{sub 3}, PF{sub 5}, and BF{sub 3}) were examined f...
The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very ...
Abstract Sulphur hexafluoride (SF6) is a potent greenhouse gas used in high voltage accelerators. As...
In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typi...
Clean mode chamber condition controlling provides a good method to improve Al etch defect performanc...
The suitability of different plasma etch models based on various plasma chemistry has been evaluated...
CVD processes are important techniques for the production of various microelectronic and tool coatin...
A study of the etch characteristics of a thermally grown silicon dioxide etch in RITEs 2406 PLASMATR...
It has been reported that SO_2 and NO_x in flue gas can be removed by corona discharge and that puls...
Chemical dry etching of Si by Ar/CF$_4$ gas mixtures has been studied using a discharge-flow apparat...