A method to determine the sticking coefficient of precursor molecules used in atomic layer deposition (ALD) will be introduced. The sticking coefficient is an interesting quantity for comparing different ALD processes and reactors but it cannot be observed easily. The method relies on free molecular flow in nanoscale cylindrical holes. The sticking coefficient is determined for tetrakis(dimethylamino) titanium in combination with ozone. The proposed method can be applied independent of the type of reactor, precursor delivery system and precursors
Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential self-termin...
Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous reactant...
Atomic layer deposition (ALD) is a thin film synthesis technique that can provide exquisite accuracy...
The temperature dependence of the sticking coefficient (SC) of precursor molecules used in atomic la...
This study focused on the atomic scale growth dynamics of amorphous Al2O3 films microscale structura...
Publisher Copyright: © 2022 The Royal Society of ChemistryUnparalleled conformality is driving ever ...
The conformality of a film grown by atomic layer deposition (ALD) is strongly affected by the reacti...
This dissertation is divided into an experimental part and a theoretical part. The experimental part...
The key advantage of atomic layer deposition (ALD) is undoubtedly the excellent step coverage, which...
Atomic layer deposition (ALD) is a form of chemical vapor deposition that uses cyclic, sequential ga...
The conformality of a film grown by atomic layer deposition (ALD) is strongly affected by the reacti...
Atomic layer deposition (ALD), also referred to historically as atomic layer epitaxy, is a vapor-pha...
Implementation of vapor/phase dosing of small molecule inhibitors (SMIs) in advanced atomic layer de...
Atomic layer deposition (ALD) is a well‐established vapor‐phase technique for depositing thin films ...
Atomic layer deposition (ALD) is a technique for depositing thin films of materials with a precise t...
Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential self-termin...
Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous reactant...
Atomic layer deposition (ALD) is a thin film synthesis technique that can provide exquisite accuracy...
The temperature dependence of the sticking coefficient (SC) of precursor molecules used in atomic la...
This study focused on the atomic scale growth dynamics of amorphous Al2O3 films microscale structura...
Publisher Copyright: © 2022 The Royal Society of ChemistryUnparalleled conformality is driving ever ...
The conformality of a film grown by atomic layer deposition (ALD) is strongly affected by the reacti...
This dissertation is divided into an experimental part and a theoretical part. The experimental part...
The key advantage of atomic layer deposition (ALD) is undoubtedly the excellent step coverage, which...
Atomic layer deposition (ALD) is a form of chemical vapor deposition that uses cyclic, sequential ga...
The conformality of a film grown by atomic layer deposition (ALD) is strongly affected by the reacti...
Atomic layer deposition (ALD), also referred to historically as atomic layer epitaxy, is a vapor-pha...
Implementation of vapor/phase dosing of small molecule inhibitors (SMIs) in advanced atomic layer de...
Atomic layer deposition (ALD) is a well‐established vapor‐phase technique for depositing thin films ...
Atomic layer deposition (ALD) is a technique for depositing thin films of materials with a precise t...
Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential self-termin...
Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous reactant...
Atomic layer deposition (ALD) is a thin film synthesis technique that can provide exquisite accuracy...