Atomic layer deposition of high-k oxides of the group 4 metals for memory applications

This paper reviews several high-k ALD processes potentially applicable to the production of capacitors, concentrating on very recent developments. A list of the dielectric materials under investigation consists of the oxides of several metals, including the Group 4 (Ti, Zr, Hf) elements. The binary oxides of Group 4 metals, as well as their mixtures with other oxides, doped hosts, or multi-layers in the form Of nano-laminates are of interest. Several examples of our recent results are shown, including possible ALD routes to materials not previously grown, as well as advances in process development