The atomistic structure, thin-film stability, and mechanical failure processes at fcc/bcc heterophase boundaries are studied in the Cu-Ta model system by ab initio density functional theory (DFT) calculations and molecular dynamics (MD) simulations. For thin films, Cu is found to dewet from Ta, leaving a single stable semi-coherent monolayer of Cu on Ta. For bulk systems, the first Cu layer at the interface is found to exhibit a distinct, mixed fcc-bcc structure from the rest of the fcc Cu. This layer facilitates the transition from the bcc to the fcc crystal structures across the interface. Mechanical failure under tensile stress is found to occur above this first Cu interface layer
A Monte Carlo model is applied to study a Σ = 5 (310) fcc tilt boundary structure and impurity segre...
Molecular dynamics simulations have been used to study the effects of different orientation relation...
A Monte Carlo model is applied to study a Σ = 5 (310) fcc tilt boundary structure and impurity segre...
The adhesion, stability, and wetting behavior at interfaces between thin Cu films and clean Ta (110)...
Molecular dynamics (MD) simulations are carried out to investigate the effects of the type and spaci...
Molecular-dynamics simulations using embedded atom method potentials were carried out to study the g...
Molecular dynamics (MD) simulations are carried out to investigate the effects of the type and spaci...
Design of next-generation high strength metallic materials for damage-resistant applications relies ...
Design of next-generation high strength metallic materials for damage-resistant applications relies ...
We investigate film morphologies of heteroepitaxial face-centered cubic (fcc) thin metal adlayers gr...
Nanometer-scale-thick films of metals and semiconductor heterostructures are used increasingly in mo...
Tantalum (Ta) is a metal with good properties to act as a diffusion barrier material in computer chi...
Tantalum (Ta) is a metal with good properties to act as a diffusion barrier material in computer chi...
The continuous downward scaling of electronic devices has renewed attention on the importance of the...
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Ci...
A Monte Carlo model is applied to study a Σ = 5 (310) fcc tilt boundary structure and impurity segre...
Molecular dynamics simulations have been used to study the effects of different orientation relation...
A Monte Carlo model is applied to study a Σ = 5 (310) fcc tilt boundary structure and impurity segre...
The adhesion, stability, and wetting behavior at interfaces between thin Cu films and clean Ta (110)...
Molecular dynamics (MD) simulations are carried out to investigate the effects of the type and spaci...
Molecular-dynamics simulations using embedded atom method potentials were carried out to study the g...
Molecular dynamics (MD) simulations are carried out to investigate the effects of the type and spaci...
Design of next-generation high strength metallic materials for damage-resistant applications relies ...
Design of next-generation high strength metallic materials for damage-resistant applications relies ...
We investigate film morphologies of heteroepitaxial face-centered cubic (fcc) thin metal adlayers gr...
Nanometer-scale-thick films of metals and semiconductor heterostructures are used increasingly in mo...
Tantalum (Ta) is a metal with good properties to act as a diffusion barrier material in computer chi...
Tantalum (Ta) is a metal with good properties to act as a diffusion barrier material in computer chi...
The continuous downward scaling of electronic devices has renewed attention on the importance of the...
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Ci...
A Monte Carlo model is applied to study a Σ = 5 (310) fcc tilt boundary structure and impurity segre...
Molecular dynamics simulations have been used to study the effects of different orientation relation...
A Monte Carlo model is applied to study a Σ = 5 (310) fcc tilt boundary structure and impurity segre...