Untersuchung der Aktivierungseffekte durch DBD bei Atmosphärendruck für das Tieftemperatur-Direktbonden

The surface activation of silicon wafers with a dielectric barrier discharge (DBD) for direct bonding applications can greatly reduce the thermal budget for the annealing step. Various effects, which are related to the direct exposure of the native silicon oxide surface to the discharge and which may contribute to the explanation of the activation effect will be presented in this paper