F2 gas mixtures offer ideal properties to be employed as chamber cleaning gas: low dissociation energy and high reactivity, which leads to superior efficiency and ease of abatement. In this work, a new F2 gas mixture was used with a combination ratio of 10% Ar, 20% F2 and 70% N2 in order to obtain a maximum of 20% fluorine in inert gases. This novel Ar/N2/F2 gas mixture has been evaluated as a candidate to replace conventional cleaning gases, like NF3, C 2F6 and CF4 in an industrial AMAT P5000 CVD chamber tool. Standard equipment has been used, showing complete compatibility with the new gas. The tested Ar/N2/F2 mixture shows improvements in both parameters, cleaning at a faster rate (up to more 27%), even requiring a lower amount of gas (m...
[[abstract]]The abatement of greenhouse gases from semiconductor processes is becoming important. Me...
Chemical dry etching of Si by Ar/CF$_4$ gas mixtures has been studied using a discharge-flow apparat...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
A new F-2 gas mixture was evaluated as a substitute for conventional cleaning gases such as, NF3, C2...
The target of this work was to find viable alternative CVD-cleaning gas mixtures for the semiconduct...
Four different F{sub 2}-based gases (SF{sub 6}, NF{sub 3}, PF{sub 5}, and BF{sub 3}) were examined f...
In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typi...
The gases used in industrial cleaning processes are considered greenhouse gases with a high global w...
The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very ...
A study of the etch characteristics of a thermally grown silicon dioxide etch in RITEs 2406 PLASMATR...
A discharge-flow type of chemical dry etching apparatus was developed in order to study the etching ...
International audienceIn this work, the effects of the N2 addition to the SF6 plasma used in the iso...
Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between ...
Abstract Sulphur hexafluoride (SF6) is a potent greenhouse gas used in high voltage accelerators. As...
The suitability of different plasma etch models based on various plasma chemistry has been evaluated...
[[abstract]]The abatement of greenhouse gases from semiconductor processes is becoming important. Me...
Chemical dry etching of Si by Ar/CF$_4$ gas mixtures has been studied using a discharge-flow apparat...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
A new F-2 gas mixture was evaluated as a substitute for conventional cleaning gases such as, NF3, C2...
The target of this work was to find viable alternative CVD-cleaning gas mixtures for the semiconduct...
Four different F{sub 2}-based gases (SF{sub 6}, NF{sub 3}, PF{sub 5}, and BF{sub 3}) were examined f...
In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typi...
The gases used in industrial cleaning processes are considered greenhouse gases with a high global w...
The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very ...
A study of the etch characteristics of a thermally grown silicon dioxide etch in RITEs 2406 PLASMATR...
A discharge-flow type of chemical dry etching apparatus was developed in order to study the etching ...
International audienceIn this work, the effects of the N2 addition to the SF6 plasma used in the iso...
Two reactive ion etching (RIE) processes were studied to show the relative etch selectivity between ...
Abstract Sulphur hexafluoride (SF6) is a potent greenhouse gas used in high voltage accelerators. As...
The suitability of different plasma etch models based on various plasma chemistry has been evaluated...
[[abstract]]The abatement of greenhouse gases from semiconductor processes is becoming important. Me...
Chemical dry etching of Si by Ar/CF$_4$ gas mixtures has been studied using a discharge-flow apparat...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...