In this work, the optical eigenmodes of a semipolar (Al,In)GaN laser diode are calculated. A full vectorial one-dimensional 4×4 transfer matrix method is used to correctly incorporate the influence of birefringence of the wurtzite crystal. Depending on the orientation of the laser waveguide relative to the c-axis, the eigenmodes show TE/TM- or extraordinary/ordinary polarization. The polarization direction of the eigenmodes is crucial for the performance of the laser, as it determines the relevant interband matrix elements for the optical gain
Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structur...
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by...
This is the published version. Copyright © 2003 American Institute of PhysicsWe have experimentally ...
Recent calculations of the eigenmodes in waveguides grown on semipolar GaN suggest that the optical ...
The resonator orientation of InGaN-based lasers on semipolar planes influences the optical polarizat...
The optical gain of single quantum well laser structures on semipolar (1122)-GaN in dependence of th...
The optical properties of metal-organic chemical vapor deposition gallium nitride layers were measur...
Recently, InGaN grown on semipolar and non-polar orientation has caused special attraction due to re...
[[abstract]]The optical polarization of GaN/AlGaN wurtzite quantum wells in various orientations is ...
Light emitting diodes (LEDs) based on the (In,Al,Ga)N material system offer the possibility to gener...
The crystal orientation effect on optical anisotropy in ultraviolet InGaN/GaN quantum-well (QW) ligh...
[[abstract]]The polarity is a special property for III-nitride materials with wurtzite structure alo...
We present a generalmethod for the modeling of semiconductor lasers such as a vertical-cavity surfac...
We have used polarized photoreflectance spectroscopy to study the electronic-band-structure modifica...
We use photoreflectance (PR) spectroscopy to study the electronic band structure modification of GaN...
Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structur...
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by...
This is the published version. Copyright © 2003 American Institute of PhysicsWe have experimentally ...
Recent calculations of the eigenmodes in waveguides grown on semipolar GaN suggest that the optical ...
The resonator orientation of InGaN-based lasers on semipolar planes influences the optical polarizat...
The optical gain of single quantum well laser structures on semipolar (1122)-GaN in dependence of th...
The optical properties of metal-organic chemical vapor deposition gallium nitride layers were measur...
Recently, InGaN grown on semipolar and non-polar orientation has caused special attraction due to re...
[[abstract]]The optical polarization of GaN/AlGaN wurtzite quantum wells in various orientations is ...
Light emitting diodes (LEDs) based on the (In,Al,Ga)N material system offer the possibility to gener...
The crystal orientation effect on optical anisotropy in ultraviolet InGaN/GaN quantum-well (QW) ligh...
[[abstract]]The polarity is a special property for III-nitride materials with wurtzite structure alo...
We present a generalmethod for the modeling of semiconductor lasers such as a vertical-cavity surfac...
We have used polarized photoreflectance spectroscopy to study the electronic-band-structure modifica...
We use photoreflectance (PR) spectroscopy to study the electronic band structure modification of GaN...
Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structur...
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by...
This is the published version. Copyright © 2003 American Institute of PhysicsWe have experimentally ...