In this paper we investigate the waveguiding (WG) of direct green InGaN laser diodes grown on c-planeGaNsubstrates. The problem of parasitic modes emerges due to the reduced refractive index difference between the GaN waveguide and AlGaN cladding layers for green compared to blue emitting laser diodes. We discuss several approaches to avoid substrate modes. We investigate different materials and designs for optimized WG of green InGaN laser diodes using a 1D transfer matrix simulation tool
Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulat...
<p> <span style="text-transform: none; background-color: rgb(255,255,255); text-indent: 0px; displa...
We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the ...
This paper focuses on the optical mode analysis of laser diodes to improve light emission. Under the...
Symmetric InGaN/GaN/AlGaN conventional blue laser waveguides are analyzed. It is shown that due to t...
The influence of using InGaN waveguides on blue laser diodes was theoretically studied using 1D drif...
Confinement factor and absorption loss of AlInGaN based multiquantum well laser diodes (LDs) were in...
Simulations of blue and green laser diodes with InGaN quantum wells are presented. In this study, a ...
Potential barriers between the waveguide layer and MQW active region may influence injection efficie...
Confinement factor and absorption loss of AlInGaN based multiquantum well laser diodes (LDs) w...
Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile a...
Blue and violet laser diodes (LDs) made from the (Al,In)GaN material system were first demonstrated ...
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by...
We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420...
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by...
Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulat...
<p> <span style="text-transform: none; background-color: rgb(255,255,255); text-indent: 0px; displa...
We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the ...
This paper focuses on the optical mode analysis of laser diodes to improve light emission. Under the...
Symmetric InGaN/GaN/AlGaN conventional blue laser waveguides are analyzed. It is shown that due to t...
The influence of using InGaN waveguides on blue laser diodes was theoretically studied using 1D drif...
Confinement factor and absorption loss of AlInGaN based multiquantum well laser diodes (LDs) were in...
Simulations of blue and green laser diodes with InGaN quantum wells are presented. In this study, a ...
Potential barriers between the waveguide layer and MQW active region may influence injection efficie...
Confinement factor and absorption loss of AlInGaN based multiquantum well laser diodes (LDs) w...
Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile a...
Blue and violet laser diodes (LDs) made from the (Al,In)GaN material system were first demonstrated ...
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by...
We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420...
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by...
Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulat...
<p> <span style="text-transform: none; background-color: rgb(255,255,255); text-indent: 0px; displa...
We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the ...