Different wideband amplifiers, hybrid designs at lower frequencies, and monolithically integrated circuits (MMIC) at higher frequencies were designed, fabricated, and measured. These amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of amplifiers are mainly electronic warfare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have a high demand for wideband high power amplifiers. The second application also needs high robust low noise amplifiers for its receive path. Output power levels of 38 W for hybrid amplifiers at lower frequencies up to 6 GHz and 15 W for the MMIC power amplifiers at higher frequencies are measured. With these buildi...
GaN HFETs have been proposed for high power high linearity and high bandwidth applications and reach...
This paper reports on the design, fabrication and measured performance of an E-band power amplifier ...
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were design...
This paper reports on two wide bandwidth monolithic power amplifiers suitable for electronic warfare...
This paper presents the design and implementation of power amplifiers using high-power gallium nitri...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
Ankara : The Department of Electrical and Electronics Engineering and the Graduate School of Enginee...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
This work discusses the fabrication of two GaNbased power amplifier modules, suitable to increase th...
In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and ...
This paper reports on a wide bandwidth monolithic power amplifier suitable for wide bandwidth applic...
Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10W for X-band radar applications...
This paper presents measurement results of a monolithic microwave integrated circuit (MMIC) chip set...
Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10W for X-band radar applications...
GaN HFETs have been proposed for high power high linearity and high bandwidth applications and reach...
This paper reports on the design, fabrication and measured performance of an E-band power amplifier ...
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were design...
This paper reports on two wide bandwidth monolithic power amplifiers suitable for electronic warfare...
This paper presents the design and implementation of power amplifiers using high-power gallium nitri...
The need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microw...
Ankara : The Department of Electrical and Electronics Engineering and the Graduate School of Enginee...
Most wireless systems must be able to output a high enough output power to serve their purpose. A po...
This work discusses the fabrication of two GaNbased power amplifier modules, suitable to increase th...
In this paper we discuss the advantages offered by GaN HEMT technology in the design of narrow- and ...
This paper reports on a wide bandwidth monolithic power amplifier suitable for wide bandwidth applic...
Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10W for X-band radar applications...
This paper presents measurement results of a monolithic microwave integrated circuit (MMIC) chip set...
Broadband microstrip and coplanar MMIC amplifiers featuring beyond 10W for X-band radar applications...
GaN HFETs have been proposed for high power high linearity and high bandwidth applications and reach...
This paper reports on the design, fabrication and measured performance of an E-band power amplifier ...
In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz...