Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma. (C) 2008 Elsevier B.V. All rights reserved.Carbon free TaNx films were deposited by plasma enhanced atomic layer deposit...
TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations ...
TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations ...
TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations ...
Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a com...
Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a com...
TaNx diffusion barriers with good barrier properties at subnanometer thickness were deposited by pla...
TaNx diffusion barriers with good barrier properties at subnanometer thickness were deposited by pla...
TaNx diffusion barriers with good barrier properties at subnanometer thickness were deposited by pla...
Plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) thin films was investigate...
Remote plasma at. layer deposition (ALD) of TaNx films from Ta[NMe2]5 and H2, H2-N2, and NH3 plasmas...
Remote plasma at. layer deposition (ALD) of TaNx films from Ta[NMe2]5 and H2, H2-N2, and NH3 plasmas...
Tantalum carbonitride thin films were deposited by plasma-enhanced atomic layer deposition using the...
Ta(C)N thin films were deposited by plama-enhanced atomic layer deposition using an alternate supply...
TaN and TiN films were deposited by remote plasma atomic layer deposition (ALD) using the combinatio...
TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations ...
TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations ...
TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations ...
TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations ...
Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a com...
Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a com...
TaNx diffusion barriers with good barrier properties at subnanometer thickness were deposited by pla...
TaNx diffusion barriers with good barrier properties at subnanometer thickness were deposited by pla...
TaNx diffusion barriers with good barrier properties at subnanometer thickness were deposited by pla...
Plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) thin films was investigate...
Remote plasma at. layer deposition (ALD) of TaNx films from Ta[NMe2]5 and H2, H2-N2, and NH3 plasmas...
Remote plasma at. layer deposition (ALD) of TaNx films from Ta[NMe2]5 and H2, H2-N2, and NH3 plasmas...
Tantalum carbonitride thin films were deposited by plasma-enhanced atomic layer deposition using the...
Ta(C)N thin films were deposited by plama-enhanced atomic layer deposition using an alternate supply...
TaN and TiN films were deposited by remote plasma atomic layer deposition (ALD) using the combinatio...
TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations ...
TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations ...
TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations ...
TaN and TiN films were deposited by remote plasma at. layer deposition (ALD) using the combinations ...