Improved design of an InP-based microdisk laser heterogeneously integrated with SOI

Microdisk lasers heterogeneously Integrated with SOI are promising sources for photonic Integrated circuits based on silicon. The microdisk lasers are only a few micrometers In size and they allow for wafer scale fabrication. We have demonstrated a new design of an electrically Injected microdisk laser bonded on SOI with a considerable Improvement of the performance. We observed threshold currents as low as 350 μ A and output power up to 120 μ W for a 7.5 μ m microdisk diameter under continuous-wave operation. Compared to previous results this comes down to a 30% reduction of the threshold current and a maximum output power which is increased by more than a factor of 10.Microdisk lasers heterogeneously Integrated with SOI are promising sources for photonic Integrated circuits based on silicon. The microdisk lasers are only a few micrometers In size and they allow for wafer scale fabrication. We have demonstrated a new design of an electrically Injected microdisk laser bonded on SOI with a considerable Improvement of the performance. We observed threshold currents as low as 350 μ A and output power up to 120 μ W for a 7.5 μ m microdisk diameter under continuous-wave operation. Compared to previous results this comes down to a 30% reduction of the threshold current and a maximum output power which is increased by more than a factor of 10.C