In this work, direct laser interference patterning of hydrogen-free tetrahedral amorphous carbon (ta-C) thin films using an ultraviolet (UV) nanosecond pulsed laser is investigated. Using this method, line-like arrays with submicrometer resolution were fabricated. In particular, a 180 nm grating period was successfully produced. In addition, it was found that depending on the laser energy density, the tetrahedral carbon film either graphitizes or crystallizes locally at the interference maxima positions. Furthermore, the crystallization is accompanied with a delamination of the film and even the formation of carbon fiber-like structures. The electrical properties of graphitized and delaminated ta-C were measured
Amorphous carbon films containing no hydrogen were irradiated with a pulsed UV laser in vacuum. Rama...
International audienceHigh-density tetrahedral amorphous carbon (ta-C) films have been prepared by n...
Amorphous hydrogenated carbon films were formed on the Si (100) wafers by a direct-ion beam depositi...
In this work, the influence of surface topography and micro structural changes on the tribological p...
We have produced hydrogen-free tetrahedral amorphous carbon films with different densities and Young...
We have investigated the direct laser interference patterning (DLIP) of tetrahedral amorphous carbon...
In the paper we report on laser surface modification of super hard micrometer-thick tetrahedral amor...
Previous works have showed that textured carbon film can be fabricated by applying suitable ion ener...
Super-hard coatings are of increasing scientific interest as they allow synthesizing materials with ...
Tetrahedral amorphous carbon films have been produced by pulsed laser deposition, at a wavelength o...
The structure and composition of tetrahedral-coordinated amorphous diamond-like carbon films (a-tC) ...
A pressure cell with an anvil made of sapphire and the other made of tungsten carbide, was construct...
International audienceGlassy carbon (GC) is a chemically stable form of fully $sp^2$-bonded carbon w...
The dependence of optical, electronic and thermal penetration zones on the thickness of nanoscale la...
Diamond-like carbon (DLC) films have been prepared by pulsed laser deposition (PLD) (wavelength 248 ...
Amorphous carbon films containing no hydrogen were irradiated with a pulsed UV laser in vacuum. Rama...
International audienceHigh-density tetrahedral amorphous carbon (ta-C) films have been prepared by n...
Amorphous hydrogenated carbon films were formed on the Si (100) wafers by a direct-ion beam depositi...
In this work, the influence of surface topography and micro structural changes on the tribological p...
We have produced hydrogen-free tetrahedral amorphous carbon films with different densities and Young...
We have investigated the direct laser interference patterning (DLIP) of tetrahedral amorphous carbon...
In the paper we report on laser surface modification of super hard micrometer-thick tetrahedral amor...
Previous works have showed that textured carbon film can be fabricated by applying suitable ion ener...
Super-hard coatings are of increasing scientific interest as they allow synthesizing materials with ...
Tetrahedral amorphous carbon films have been produced by pulsed laser deposition, at a wavelength o...
The structure and composition of tetrahedral-coordinated amorphous diamond-like carbon films (a-tC) ...
A pressure cell with an anvil made of sapphire and the other made of tungsten carbide, was construct...
International audienceGlassy carbon (GC) is a chemically stable form of fully $sp^2$-bonded carbon w...
The dependence of optical, electronic and thermal penetration zones on the thickness of nanoscale la...
Diamond-like carbon (DLC) films have been prepared by pulsed laser deposition (PLD) (wavelength 248 ...
Amorphous carbon films containing no hydrogen were irradiated with a pulsed UV laser in vacuum. Rama...
International audienceHigh-density tetrahedral amorphous carbon (ta-C) films have been prepared by n...
Amorphous hydrogenated carbon films were formed on the Si (100) wafers by a direct-ion beam depositi...