We have demonstrated quantum cascade lasers (QCL) emitting at 5 m based on efficient injection of the four quantum wells active region design with vertical transitions and strain-compensated superlattice with high injection efficiency and short ground state lifetime. Using a processing sequence adjusted for QCL state of the art devices were reproducibly obtained
EP 1536531 A UPAB: 20050818 NOVELTY - A quantum cascade laser has an emission wavelength below 3.4 m...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
The papers in this special section were presented at the International Quantum Cascade Lasers School...
Quantum-cascade lasers, which are obtained by molecular-beam epitaxy, emit at wavelengths of 5.0 mu ...
Quantum cascade (QC) lasers emitting at lambda approximate to 8 mu m with a power performance equal ...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
93 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.From SIMS experiment, MBE-grow...
We present the status of quantum-cascade lasers without injector regions, based on a four- and five-...
Details of the design, growth, fabrication, and operation of quantum cascade lasers (QCLs) that emit...
Superlattice quantum cascade (QC) lasers based on optical transitions between conduction minibands a...
We report the realization of a semiconductor injection laser based on intraband transitions with emi...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
Varying-composition, deep-well quantum cascade laser (DW-QCL) structures are proposed to suppress ca...
EP 1536531 A UPAB: 20050818 NOVELTY - A quantum cascade laser has an emission wavelength below 3.4 m...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
The papers in this special section were presented at the International Quantum Cascade Lasers School...
Quantum-cascade lasers, which are obtained by molecular-beam epitaxy, emit at wavelengths of 5.0 mu ...
Quantum cascade (QC) lasers emitting at lambda approximate to 8 mu m with a power performance equal ...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
93 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.From SIMS experiment, MBE-grow...
We present the status of quantum-cascade lasers without injector regions, based on a four- and five-...
Details of the design, growth, fabrication, and operation of quantum cascade lasers (QCLs) that emit...
Superlattice quantum cascade (QC) lasers based on optical transitions between conduction minibands a...
We report the realization of a semiconductor injection laser based on intraband transitions with emi...
Quantum-cascade lasers based on a bound-to-continuum transition and emitting at lambda similar to 10...
Varying-composition, deep-well quantum cascade laser (DW-QCL) structures are proposed to suppress ca...
EP 1536531 A UPAB: 20050818 NOVELTY - A quantum cascade laser has an emission wavelength below 3.4 m...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
The papers in this special section were presented at the International Quantum Cascade Lasers School...