Verfahren zur Bestimmung einer Struktur eines Halbleitermaterials mit vordefinierten elektrooptischen Eigenschaften sowie Verfahren zu dessen Herstellung

DE 102010008905 B3 UPAB: 20110708 NOVELTY - The method involves selecting semi-conducting material from multiple groups, and selecting energetic position and/or width of photonic band gap with respect to an electrical band gap of the material. A type of carried out photonic structure is selected, and the photonic structure is selected from a Bragg-stack, two dimensional or three dimensional photonic crystal i.e. inverted opal. A grating constant of the photonic band gap is determined from parameters of the material, energetic position and/or width of photonic band gap and type of carried out photonic structure selecting processes. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a semiconductor material with a predefined energy electro-optical band structure. USE - Method for determining a grating constant of one-, two-, three-dimensional photonic structures of a semiconductor material i.e. solar cell. Can also be used for a diode, LED and laser diode and a sensor. ADVANTAGE - The grating constant of the photonic band gap is determined from parameters of the material, energetic position and/or width of photonic band gap and type of carried out photonic structure selecting processes, thus determining the grating constant of one-two-three dimensional photonic structure of the semiconductor material in accurate manner, so that the energy position of the photonic band gap can be aligned according to the energy position of the electrical band gap in precise manner