Add to ORKGThis paper presents results of investigations of defect formation during annealing of silicon wafer pairs for hydrophilic direct bonding. Results concerning the effect of atmospheric pressure plasma pre-treatments of bare silicon wafers and the effect of a pre-annealing step after plasma treatment before bonding will be presented
Wafer direct bonding is an attractive approach to manufacture future micro-electro-mechanical system...
Atmospheric pressure plasma treatments were used to control free surface energy of different areas o...
In this paper, the void formation and the surface energy for low-temperature Si-Si wafer bonding tec...
Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lo...
This paper presents the results of surface energy measurements performed in situ during annealing of...
The effect of argon plasma treatment prior to hydrophobic bonding of silicon wafers was investigated...
This paper presents first results of fracture surface energies measurements performed in-situ during...
Low-temperature bonding of Si wafers has been studied utilizing reactive ion etching-mode plasma act...
The objective is to investigate plasma assisted bonding processes having the potential of forming ox...
Using an original and dynamic crack-opening method the distribution of surface energy values is anal...
Low temperature bonding of Si wafers has been studied utilizing RIE-mode plasma activation. The hydr...
For both hydrophilic and hydrophobic surface preparation, using the combination of advanced surface ...
The procedure of low temperature silicon direct bonding (LTSDB) was investigated by bonding surface ...
Silicon/silicon interfaces were prepared by wafer bonding using the silicon-to-silicon direct bondin...
This paper presents the results of surface energy y measurements performed in situ during annealing ...
Wafer direct bonding is an attractive approach to manufacture future micro-electro-mechanical system...
Atmospheric pressure plasma treatments were used to control free surface energy of different areas o...
In this paper, the void formation and the surface energy for low-temperature Si-Si wafer bonding tec...
Using dielectric barrier discharges at atmospheric pressure, silicon wafers have been treated for lo...
This paper presents the results of surface energy measurements performed in situ during annealing of...
The effect of argon plasma treatment prior to hydrophobic bonding of silicon wafers was investigated...
This paper presents first results of fracture surface energies measurements performed in-situ during...
Low-temperature bonding of Si wafers has been studied utilizing reactive ion etching-mode plasma act...
The objective is to investigate plasma assisted bonding processes having the potential of forming ox...
Using an original and dynamic crack-opening method the distribution of surface energy values is anal...
Low temperature bonding of Si wafers has been studied utilizing RIE-mode plasma activation. The hydr...
For both hydrophilic and hydrophobic surface preparation, using the combination of advanced surface ...
The procedure of low temperature silicon direct bonding (LTSDB) was investigated by bonding surface ...
Silicon/silicon interfaces were prepared by wafer bonding using the silicon-to-silicon direct bondin...
This paper presents the results of surface energy y measurements performed in situ during annealing ...
Wafer direct bonding is an attractive approach to manufacture future micro-electro-mechanical system...
Atmospheric pressure plasma treatments were used to control free surface energy of different areas o...
In this paper, the void formation and the surface energy for low-temperature Si-Si wafer bonding tec...