Temperature-dependent photoluminescence in a Ga(AsBi) structure is modelled in an excitonic hopping model and compared to experiment. It is shown that theory and experiment cannot be brought into agreement when using a single energy scale. Thus, a second energy scale is introduced, resulting in a good agreement between theory and experiment. The two scales are identified with spatially large alloy disorder and additional cluster states subdividing this first scale
Les mécanismes de transfert des excitons liés à l'azote dans les alliages GaxIn1-xP : N et GaAs1-xPx...
The spectral autocorrelation for a set of over 400 near-field photoluminescence spectra of a nar-row...
We investigate photoluminescence excitation (PLE) and selective photoluminescence (SPL) of ordered a...
The temporal evolution of the spectrally resolved luminescence is measured for a Ga(AsBi) sample at ...
A comprehensive assessment of the nature of the distribution of sub band-gap energy states in bulk G...
The effects of external perturbations-such as temperature, photo-excited carrier density, and magnet...
Alloying semiconductors are often used to tune the material properties desired for device applicatio...
The photoluminescence from semiconductor alloys is inhomogeneously broadened due to alloy disorder. ...
A phenomenological model is suggested to describe nonradiative recombination of optical excitations ...
The thermal equilibrium between excitons whose levels are split by the stacking fault has been studi...
A phenomenological model is suggested to describe nonradiative recombination of optical excitations ...
Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-...
Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-...
We have studied the photoluminescence of GaSe at 80 K under energy-selective excitation conditions. ...
We have studied the photoluminescence of GaSe at 80 K under energy-selective excitation conditions. ...
Les mécanismes de transfert des excitons liés à l'azote dans les alliages GaxIn1-xP : N et GaAs1-xPx...
The spectral autocorrelation for a set of over 400 near-field photoluminescence spectra of a nar-row...
We investigate photoluminescence excitation (PLE) and selective photoluminescence (SPL) of ordered a...
The temporal evolution of the spectrally resolved luminescence is measured for a Ga(AsBi) sample at ...
A comprehensive assessment of the nature of the distribution of sub band-gap energy states in bulk G...
The effects of external perturbations-such as temperature, photo-excited carrier density, and magnet...
Alloying semiconductors are often used to tune the material properties desired for device applicatio...
The photoluminescence from semiconductor alloys is inhomogeneously broadened due to alloy disorder. ...
A phenomenological model is suggested to describe nonradiative recombination of optical excitations ...
The thermal equilibrium between excitons whose levels are split by the stacking fault has been studi...
A phenomenological model is suggested to describe nonradiative recombination of optical excitations ...
Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-...
Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-...
We have studied the photoluminescence of GaSe at 80 K under energy-selective excitation conditions. ...
We have studied the photoluminescence of GaSe at 80 K under energy-selective excitation conditions. ...
Les mécanismes de transfert des excitons liés à l'azote dans les alliages GaxIn1-xP : N et GaAs1-xPx...
The spectral autocorrelation for a set of over 400 near-field photoluminescence spectra of a nar-row...
We investigate photoluminescence excitation (PLE) and selective photoluminescence (SPL) of ordered a...