We report N-K-edge x-ray absorption near-edge spectra of a set of In(x)Ga(1-x)N alloy epilayers with 0.36 < x < 0.87, including linear dichroism effects. Careful experimental and data treatment procedures lead to consistent variations of spectral features with In concentration and sample orientation with respect to the direction of linear polarization of the x-ray beam. Insight into the origin of spectral features is provided by a combination of ab initio simulations of the equilibrium structure and atom-by-atom spectral simulations. The relation between the spectral lineshape and the variations in the composition of the first coordination shell and the corresponding local structural distortions is discussed
The energy position of the optical absorption edge and the free carrier populations in In{sub x}Ga{s...
We have investigated the structure of nitrogen-hydrogen complexes in GaAs1-yNy and InxGa1-xAs1-yNy d...
The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich InxGa1−x...
none7siWe report N-K–edge x-ray absorption near-edge spectra of a set of InxGa1−xN alloy epila...
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapph...
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapph...
Dilute nitrides, in particular InxGa1-xAs1-yNy are very interesting alloys because of their actual a...
Optical absorption spectroscopy has been applied to study properties such as the fundamental absorpt...
The electronic structure of InGaN epitaxial layers grown on sapphire substrates was studied using X-...
The energy position of the optical-absorption edge and the free-carrier populations in Inx Ga1-x N t...
Polarized measurements of oriented single crystals can be used to simplify the interpretation of X-r...
GaN doped with various amounts of In can be used to make diodes with colors from blue to green. In o...
We describe the use of X-ray absorption spectroscopy (XAS) with synchrotron radiation to study the l...
A wide-ranging experimental approach reveals a linear relationship between photoluminescence band pe...
Postgrowth hydrogen incorporation in In-rich InxGa1 12xN (x>0.4) alloys strongly modifies the optica...
The energy position of the optical absorption edge and the free carrier populations in In{sub x}Ga{s...
We have investigated the structure of nitrogen-hydrogen complexes in GaAs1-yNy and InxGa1-xAs1-yNy d...
The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich InxGa1−x...
none7siWe report N-K–edge x-ray absorption near-edge spectra of a set of InxGa1−xN alloy epila...
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapph...
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapph...
Dilute nitrides, in particular InxGa1-xAs1-yNy are very interesting alloys because of their actual a...
Optical absorption spectroscopy has been applied to study properties such as the fundamental absorpt...
The electronic structure of InGaN epitaxial layers grown on sapphire substrates was studied using X-...
The energy position of the optical-absorption edge and the free-carrier populations in Inx Ga1-x N t...
Polarized measurements of oriented single crystals can be used to simplify the interpretation of X-r...
GaN doped with various amounts of In can be used to make diodes with colors from blue to green. In o...
We describe the use of X-ray absorption spectroscopy (XAS) with synchrotron radiation to study the l...
A wide-ranging experimental approach reveals a linear relationship between photoluminescence band pe...
Postgrowth hydrogen incorporation in In-rich InxGa1 12xN (x>0.4) alloys strongly modifies the optica...
The energy position of the optical absorption edge and the free carrier populations in In{sub x}Ga{s...
We have investigated the structure of nitrogen-hydrogen complexes in GaAs1-yNy and InxGa1-xAs1-yNy d...
The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich InxGa1−x...