Pulsed THz emission from low temperature grown Be-doped InGaAs/InAlAs photoconductive switches at 1030 nm excitation
- Dietz, R.J.B.
- Wilk, R.
- Globisch, B.
- Roehle, H.
- Stanze, D.
- Ullrich, S.
- Schumann, S.
- Born, N.
- Voss, N.
- Stecher, M.
- Koch, M.
- Sartorius, B.
- Schell, M.
Publication date
January 2012
DOIAbstract
We present first results of pulsed THz emission from low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures at an excitation wavelength of 1030 nm. The spectra obtained reach 3 THz. We further investigate the material's relaxation time constants by differential transmission experiments
Add to ORKG