For use in a millimeter-wave direct detection radiometer for earth remote sensing, we have developed a low-noise amplifier (LNA) module with a small-signal gain of 19.5 dB at 243 GHz and a 3 dB bandwidth of 40 GHz. The implemented three-stage LNA MMIC has been manufactured using a 50 nm gate length metamorphic HEMT (mHEMT) technology on 50 m thick GaAs substrates. Each of the two on-chip integrated E-plane probe waveguide transitions offers a transmission loss of only 0.5 dB at 243 GHz including a 7.5 mm long WR-3.4 waveguide. Due to the low-loss packaging, the LNA module achieves a low noise figure of only 6.0 dB at room temperature
In this paper, we present a four-stage submillimeterwave monolithic integrated circuit (S-MMIC) ampl...
This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNA...
MMIC Broadband Low Noise Amplifiers (LNA) for radio astronomy applications with 100 nm GaAs metamorp...
A compact H-band (220-325 GHz) low-noise amplifier circuit has been developed, based on a grounded c...
G-band low-noise amplifier (LNA) modules have been successfully developed for use in high-resolution...
Two compact H-band (220-325 GHz) low-noise amplifier MMICs have been developed, based on a grounded ...
Abstract — W-band low-noise amplifier (LNA) MMICs have been developed using a 70 nm metamorphic HEMT...
W-band low-noise amplifier (LNA) MMICs have been developed using a 70 nm metamorphic HEMT (MHEMT) te...
A WR-3 (220- 330 GHz) low-noise amplifier (LNA) circuit has been developed for use in next-generatio...
A compact WR-1.5 (500-750 GHz) low-noise amplifier (LNA) circuit has been developed, based on a grou...
A compact E-band amplifier circuit has been developed for use in ultra-high capacity point-to-point ...
In this letter, we present results of fully integrated 90-130 GHz receiver based on 100 nm mHEMT tec...
Two metamorphic InAlAs/InGaAs based high electron mobility transistor (MHEMT) technologies have been...
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) ...
A metamorphic composite-channel InAlAs/InGaAs based high electron mobility transistor (MHEMT) techno...
In this paper, we present a four-stage submillimeterwave monolithic integrated circuit (S-MMIC) ampl...
This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNA...
MMIC Broadband Low Noise Amplifiers (LNA) for radio astronomy applications with 100 nm GaAs metamorp...
A compact H-band (220-325 GHz) low-noise amplifier circuit has been developed, based on a grounded c...
G-band low-noise amplifier (LNA) modules have been successfully developed for use in high-resolution...
Two compact H-band (220-325 GHz) low-noise amplifier MMICs have been developed, based on a grounded ...
Abstract — W-band low-noise amplifier (LNA) MMICs have been developed using a 70 nm metamorphic HEMT...
W-band low-noise amplifier (LNA) MMICs have been developed using a 70 nm metamorphic HEMT (MHEMT) te...
A WR-3 (220- 330 GHz) low-noise amplifier (LNA) circuit has been developed for use in next-generatio...
A compact WR-1.5 (500-750 GHz) low-noise amplifier (LNA) circuit has been developed, based on a grou...
A compact E-band amplifier circuit has been developed for use in ultra-high capacity point-to-point ...
In this letter, we present results of fully integrated 90-130 GHz receiver based on 100 nm mHEMT tec...
Two metamorphic InAlAs/InGaAs based high electron mobility transistor (MHEMT) technologies have been...
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) ...
A metamorphic composite-channel InAlAs/InGaAs based high electron mobility transistor (MHEMT) techno...
In this paper, we present a four-stage submillimeterwave monolithic integrated circuit (S-MMIC) ampl...
This paper describe the small signal properties of four 155 GHz low noise amplifiers (LNAs). The LNA...
MMIC Broadband Low Noise Amplifiers (LNA) for radio astronomy applications with 100 nm GaAs metamorp...