We present the results of over 90 tight-binding molecular-dynamics simulations of collisions between three- and five-atom silicon clusters, at a system temperature of 2000K. Much the most likely products are found to be two 'magic' four-atom clusters. We show that previous studies, which focused on the equilibrium binding energies of clusters of different sizes, are of limited relevance, and introduce a new effective binding energy which incorporates the highly anharmonic dynamics of the clusters. The inclusion of dynamics enhances the magic nature of both Si4 and Si6 and destroys that of Si7
The Knudsen cell mass spectrometric method has been employed to measure the partial pressures of the...
The progressive scaling down of the silicon-based electronics has allowed to develop devices at nano...
As the device dimension in semiconductor silicon transistors reach sub-20nm, it significantly enhanc...
We present the results of over 90 tight-binding molecular-dynamics simulations of collisions between...
Tight-binding molecular dynamics is a semi-empirical method that has been used successfully in descr...
First principles electronic structure calculations have been carried out to examine the stability of...
Constant energy molecular dynamics simulations of silicon cluster growth have been conducted for clu...
Using a density-functional-based tight-binding method we investigate the stability of various vacanc...
Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/106088/1/jms3317.pd
We employ a computationally accessible semi-empirical effective Hamiltonian method to calculate bind...
Clusters of silicon and germanium exhibit multiple isomers that can be annealed to single unique str...
The authors present molecular dynamics (MD) simulations of energetic Ar+ ions (20–200 eV) interactin...
Although over the past years huge progress has been made in silicon research and silicon can be rega...
A recently developed non-conventional tight-binding method was applied in combination with molecular...
Molecular dynamics (MD) is used to understand the properties of materials by following the time evol...
The Knudsen cell mass spectrometric method has been employed to measure the partial pressures of the...
The progressive scaling down of the silicon-based electronics has allowed to develop devices at nano...
As the device dimension in semiconductor silicon transistors reach sub-20nm, it significantly enhanc...
We present the results of over 90 tight-binding molecular-dynamics simulations of collisions between...
Tight-binding molecular dynamics is a semi-empirical method that has been used successfully in descr...
First principles electronic structure calculations have been carried out to examine the stability of...
Constant energy molecular dynamics simulations of silicon cluster growth have been conducted for clu...
Using a density-functional-based tight-binding method we investigate the stability of various vacanc...
Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/106088/1/jms3317.pd
We employ a computationally accessible semi-empirical effective Hamiltonian method to calculate bind...
Clusters of silicon and germanium exhibit multiple isomers that can be annealed to single unique str...
The authors present molecular dynamics (MD) simulations of energetic Ar+ ions (20–200 eV) interactin...
Although over the past years huge progress has been made in silicon research and silicon can be rega...
A recently developed non-conventional tight-binding method was applied in combination with molecular...
Molecular dynamics (MD) is used to understand the properties of materials by following the time evol...
The Knudsen cell mass spectrometric method has been employed to measure the partial pressures of the...
The progressive scaling down of the silicon-based electronics has allowed to develop devices at nano...
As the device dimension in semiconductor silicon transistors reach sub-20nm, it significantly enhanc...