In this paper, radar transmitter circuits for next generation automotive radar sensors are presented. A 79 GHz radar transmitter with an output power of 14.5 dBm consuming only 165 mA (including frequency dividers) from a 3.3 V supply voltage clearly shows the advantage of using an improved SiGe technology with an fmax of 380 GHz. In addition, two radar transmitters for higher frequencies (around 150 GHz) based on frequency doubler circuits are showing the potential of SiGe technologies. The first transmitter achieves an output power of 3 dBm (single ended) at 144 GHz, whereas the second transmitters delivers a differential output power of 0 dBm at 150 GHz. Both transmitters achieve an ultra-wide tuning range of about 45 GHz
This papers describes the capabilities of modern SiGe semiconductor technologies for the highly-inte...
The book presents the analysis and design of integrated automotive radar receivers in Silicon-German...
SiGe BiCMOS technologies have been improved such that they o er comparable, sometimes even better RF...
Automotive Radars have introduced various functions on automobiles for driver’s safety and comfort, ...
The introduction of automotive radar sensors operating in the 76- 81 GHz frequency range is a very p...
In this thesis, the circuits which comprise the front-end of a millimeter-wave transmit-receive modu...
In this paper a SiGe chipset for automotive applications in the band around 76 GHz is presented. The...
This work presents silicon germanium (SiGe) based millimeter-wave (mm-wave) circuits and radar senso...
This thesis presents the design and implementation of 140 GHz to 170 GHz transceivers in SiGe HBT te...
Abstract—Integration of multi-mode multi-band transceivers on a single chip will enable low-cost mil...
This thesis presents the design and implementation of 140 GHz to 170 GHz transceivers in SiGe HBT te...
Automotive radar systems at 77 GHz are built using expensive III-V semiconductor such as GaAs or InP...
Recent advancements in silicon technology have paved the way for the development of integrated trans...
Recent advancements in silicon technology have paved the way for the development of integrated trans...
Automotive radar systems at 77 GHz are built using expensive III-V semiconductor such as GaAs or InP...
This papers describes the capabilities of modern SiGe semiconductor technologies for the highly-inte...
The book presents the analysis and design of integrated automotive radar receivers in Silicon-German...
SiGe BiCMOS technologies have been improved such that they o er comparable, sometimes even better RF...
Automotive Radars have introduced various functions on automobiles for driver’s safety and comfort, ...
The introduction of automotive radar sensors operating in the 76- 81 GHz frequency range is a very p...
In this thesis, the circuits which comprise the front-end of a millimeter-wave transmit-receive modu...
In this paper a SiGe chipset for automotive applications in the band around 76 GHz is presented. The...
This work presents silicon germanium (SiGe) based millimeter-wave (mm-wave) circuits and radar senso...
This thesis presents the design and implementation of 140 GHz to 170 GHz transceivers in SiGe HBT te...
Abstract—Integration of multi-mode multi-band transceivers on a single chip will enable low-cost mil...
This thesis presents the design and implementation of 140 GHz to 170 GHz transceivers in SiGe HBT te...
Automotive radar systems at 77 GHz are built using expensive III-V semiconductor such as GaAs or InP...
Recent advancements in silicon technology have paved the way for the development of integrated trans...
Recent advancements in silicon technology have paved the way for the development of integrated trans...
Automotive radar systems at 77 GHz are built using expensive III-V semiconductor such as GaAs or InP...
This papers describes the capabilities of modern SiGe semiconductor technologies for the highly-inte...
The book presents the analysis and design of integrated automotive radar receivers in Silicon-German...
SiGe BiCMOS technologies have been improved such that they o er comparable, sometimes even better RF...