The integration of passive devices on chip plays an important role in system miniaturization and enabling of future applications. In order to keep pace with the device scaling and reduction of chip area integrated MIM capacitors of enhanced capacitance density are required for supply buffering, decoupling or signal filtering
The influence of oxidation pulse during atomic layer deposition (ALD) process on electrical and diel...
Aiming for improvement of the ZrO 2-based insulator properties as compared to the state-of-the-art Z...
In this paper, we propose for the first time an attractive Si 3N4/laminated Al2O3-HfO2 (LAHO) stack ...
As operating frequency and circuit density of VLSI systems continue to increase, the L*di/dt induced...
ZrO2-based MIM capacitors are used in various memory as well as for RF applications. Thus, material ...
ZrO2-based metal-insulator-metal (MIM) capacitors are manufactured using atomic layer deposition. Th...
Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with high-κ diele...
The need for integrated passive devices (IPDs) emerges from the increasing consumer demand for elect...
A broad compositional range of the dielectric material Zr1-xHfxO2 was evaluated with respect to its ...
Metal-insulator-metal (MIM) capacitors for DRAM applications have been realised using stacked TiO2-Z...
In this paper, the material and electrical properties of ZrO2 in metal-insulator-metal (MIM) DRAM ca...
This paper focuses on zirconia and TiN based MIM buffer capacitors integrated in immediate vicinity ...
ZrO2-based metal-insulator-metal capacitors are used in various volatile and nonvolatile memory devi...
Metal-insulator-metal capacitors for dynamic random access memory applications have been realized us...
We investigated ZrO2-based new dielectric materials for random access memory by pulsed laser deposit...
The influence of oxidation pulse during atomic layer deposition (ALD) process on electrical and diel...
Aiming for improvement of the ZrO 2-based insulator properties as compared to the state-of-the-art Z...
In this paper, we propose for the first time an attractive Si 3N4/laminated Al2O3-HfO2 (LAHO) stack ...
As operating frequency and circuit density of VLSI systems continue to increase, the L*di/dt induced...
ZrO2-based MIM capacitors are used in various memory as well as for RF applications. Thus, material ...
ZrO2-based metal-insulator-metal (MIM) capacitors are manufactured using atomic layer deposition. Th...
Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with high-κ diele...
The need for integrated passive devices (IPDs) emerges from the increasing consumer demand for elect...
A broad compositional range of the dielectric material Zr1-xHfxO2 was evaluated with respect to its ...
Metal-insulator-metal (MIM) capacitors for DRAM applications have been realised using stacked TiO2-Z...
In this paper, the material and electrical properties of ZrO2 in metal-insulator-metal (MIM) DRAM ca...
This paper focuses on zirconia and TiN based MIM buffer capacitors integrated in immediate vicinity ...
ZrO2-based metal-insulator-metal capacitors are used in various volatile and nonvolatile memory devi...
Metal-insulator-metal capacitors for dynamic random access memory applications have been realized us...
We investigated ZrO2-based new dielectric materials for random access memory by pulsed laser deposit...
The influence of oxidation pulse during atomic layer deposition (ALD) process on electrical and diel...
Aiming for improvement of the ZrO 2-based insulator properties as compared to the state-of-the-art Z...
In this paper, we propose for the first time an attractive Si 3N4/laminated Al2O3-HfO2 (LAHO) stack ...