Simulations based on diffusion-limited reaction rates were able for the first time to reproduce platinum profiles in silicon for in-diffusion in a wide temperature range from 730 to 950 °C and outdiffusion associated with the ramping-down of the temperature at the end of an industrial diffusion process at 830 °C. A rigorous analysis of the out-diffusion and short-time in-diffusion profiles allowed narrowing down the parameter range for the intrinsic point defects in silicon
The presented work deals with phosphorus diffusion gettering of mc material. A significant improveme...
The presented work deals with phosphorus diffusion gettering of mc material. A significant improveme...
The commonly used partial differential equations for point defect diffusion are reviewed. Special at...
The diffusion of platinum in silicon is described by the kick-out and by the dissociative mechanism....
Close to the wafer surfaces, our platinum diffusion experiments were found to be at gross discrepanc...
In a series of experiments, the diffusion of platinum in silicon was investigated at low temperature...
Diffusion of platinum at low temperatures is a convenient way to characterize vacancy profiles in si...
Inverse U-shaped profiles of platinum in silicon were obtained after diffusion at 700degreeC. Deep l...
Platinum diffusion experiments were used in the past to establishestimates for the equilibrium conce...
Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840o...
Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840o...
Experiments of platinum diffusion in silicon were used to extract information about the equilibrium ...
Platinum is used to tailor the electrical behavior of silicon power devices, for example of silicon ...
In this paper, we develop and analyze models for the coupled iffusion of dopants and point defects, ...
Lattice vacancies in silicon play an important role in atomistic diffusion theories. They form mobil...
The presented work deals with phosphorus diffusion gettering of mc material. A significant improveme...
The presented work deals with phosphorus diffusion gettering of mc material. A significant improveme...
The commonly used partial differential equations for point defect diffusion are reviewed. Special at...
The diffusion of platinum in silicon is described by the kick-out and by the dissociative mechanism....
Close to the wafer surfaces, our platinum diffusion experiments were found to be at gross discrepanc...
In a series of experiments, the diffusion of platinum in silicon was investigated at low temperature...
Diffusion of platinum at low temperatures is a convenient way to characterize vacancy profiles in si...
Inverse U-shaped profiles of platinum in silicon were obtained after diffusion at 700degreeC. Deep l...
Platinum diffusion experiments were used in the past to establishestimates for the equilibrium conce...
Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840o...
Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840o...
Experiments of platinum diffusion in silicon were used to extract information about the equilibrium ...
Platinum is used to tailor the electrical behavior of silicon power devices, for example of silicon ...
In this paper, we develop and analyze models for the coupled iffusion of dopants and point defects, ...
Lattice vacancies in silicon play an important role in atomistic diffusion theories. They form mobil...
The presented work deals with phosphorus diffusion gettering of mc material. A significant improveme...
The presented work deals with phosphorus diffusion gettering of mc material. A significant improveme...
The commonly used partial differential equations for point defect diffusion are reviewed. Special at...
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