New Defect Luminescence Scanner for Inline Control of Material Quality: Poster presented at European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 21-25 September 2014

For inline control of the material quality, a non-destructive, non-contact, non-preparational as well as fast and reliable characterization method is needed. Photoluminescence (PL) imaging at room-temperature fulfills all these basic requirements and extended defects can be identified based on their spectral and geometrical fingerprints. Therefore, a new defect luminescence scanner (DLS) has been developed operating at conditions, which allow for rapid full-wafer scanning up to 150 mm wafers (measurement time approx. 20 min). The identification of defects imaged by the DLS will be presented in the paper. Furthermore, a possible inline use of the DLS will be discussed