Reflektierendes Kontaktschichtsystem für ein optoelektronisches Bauelement und Verfahren zu dessen Herstellung

A reflective contact layer system for an optoelectronic component (100) is specified, comprising: - a first p-doped nitride compound semiconductor layer (1), - a transparent conductive oxide layer (3), - a mirror layer (4), and - a second p-doped nitride compound semiconductor layer (2) arranged between the first p-doped nitride compound semiconductor layer (1) and the transparent conductive oxide layer (3), wherein the second p-doped nitride compound semiconductor layer (2) has N-face domains (22) at an interface (23) facing the transparent conductive oxide layer (3), and wherein the N-face domains (22) have an area proportion of at least 95 percent at the interface (23). Furthermore, a method for producing the contact layer system is specified