A new correction technique has been developed not only to reduce the corner rounding, but also to restrain the building up of shot counts that is able to increase the exposure time in electron beam (e-beam) lithography. It is able to prove the developed corner rounding correction technique is useful with high accuracies throughout the simulation of several different types of correction in the data preparation software, Inscale® from Aselta Nanographics, and its comparisons with exposure images. The developed one is helpful to suppress the accumulation of shot counts either. Furthermore, it shows the general limit of corner rounding correction in a conventional variable shaped beam exposure tool with current resist process. Firstly, we are d...
In this work, a statistical process control method is presented showing the accuracy and the reliabi...
As chip design becomes more and more complex and alternative lithography technologies like EBDW get ...
Electron beam lithography systems used for patterning of extremely small structures are a very impor...
A new correction approach was developed to improve the process window of electron beam lithography a...
For shortening the writing time, especially in shaped Electron Beam Direct Writing (EBDW), it is cru...
The e-beam lithography is faced with increasing challenges to achieve a satisfying patterning of str...
There is a growing interest for patterning on curved or tilted surfaces using electron beam lithogra...
For the manufacturing of semiconductor technologies following the ITRS roadmap, we will face the nod...
The authors describe a modification to the alignment algorithm typically used for electron beam lith...
For the manufacturing of semiconductor technologies following the ITRS roadmap, we will face the nod...
The principal goal of this work is to produce an electron beam PEC system that is faster, more accur...
A thorough study of exposure parameters for electron beam lithography using AR7520 negative tone ele...
A thorough study of exposure parameters for electron beam lithography using AR7520 negative tone ele...
A thorough study of exposure parameters for electron beam lithography using AR7520 negative tone ele...
In this paper, the corner rounding bias of a commercially available extreme ultraviolet photoresist ...
In this work, a statistical process control method is presented showing the accuracy and the reliabi...
As chip design becomes more and more complex and alternative lithography technologies like EBDW get ...
Electron beam lithography systems used for patterning of extremely small structures are a very impor...
A new correction approach was developed to improve the process window of electron beam lithography a...
For shortening the writing time, especially in shaped Electron Beam Direct Writing (EBDW), it is cru...
The e-beam lithography is faced with increasing challenges to achieve a satisfying patterning of str...
There is a growing interest for patterning on curved or tilted surfaces using electron beam lithogra...
For the manufacturing of semiconductor technologies following the ITRS roadmap, we will face the nod...
The authors describe a modification to the alignment algorithm typically used for electron beam lith...
For the manufacturing of semiconductor technologies following the ITRS roadmap, we will face the nod...
The principal goal of this work is to produce an electron beam PEC system that is faster, more accur...
A thorough study of exposure parameters for electron beam lithography using AR7520 negative tone ele...
A thorough study of exposure parameters for electron beam lithography using AR7520 negative tone ele...
A thorough study of exposure parameters for electron beam lithography using AR7520 negative tone ele...
In this paper, the corner rounding bias of a commercially available extreme ultraviolet photoresist ...
In this work, a statistical process control method is presented showing the accuracy and the reliabi...
As chip design becomes more and more complex and alternative lithography technologies like EBDW get ...
Electron beam lithography systems used for patterning of extremely small structures are a very impor...