For the extraction of spatially resolved solar cell parameters, a variety of methods has been introduced in the past years. Nearly all methods use the fact that the local luminescence intensity can be calibrated to local junction voltage. The different methods however use different approaches for the calibration. In this work we discuss the different approaches used throughout literature. We investigate the key assumption of two approaches which assumes that there are no lateral junction voltage gradients at sufficiently low excitation conditions. Our investigation is based on circuit simulations and experimental results on an example cell. We give an explanation for the remaining contrasts in luminescence images taken at these low excitati...
Recently, several novel methods have been proposed to image short-circuit current density jsc based ...
We present a novel method to determine spatially resolved the dark saturation current of standard si...
A method for spatially resolved measurement of the minority carrier diffusion length in silicon wafe...
AbstractFor the extraction of spatially resolved solar cell parameters, a variety of methods has bee...
A variety of methods extracting spatially resolved information of solar cell parameters using lumine...
In this paper we give a mathematical derivation of how luminescence images of silicon solar cells ca...
In the scope of solar cell characterisation, spatially resolved imaging (SRI) methods (EL, PL and LB...
We present a novel method to determine spatially resolved the dark saturation current of standard si...
Luminescence imaging has found wide application for the characterization of silicon solar cells and ...
Luminescence images of silicon solar cells contain information about local recombination properties ...
We demonstrate a novel method to measure the lateral distribution of the recombination current witho...
All previous methods for quantitatively evaluating photoluminescence (PL) images of solar cells assu...
Spatially resolved luminescence images of silicon solar cells and wafers reveal information on quant...
AbstractRecently, several novel methods have been proposed to image short-circuit current density js...
This work presents a method for extracting the absolute local junction voltage of a-Si:H thin-film s...
Recently, several novel methods have been proposed to image short-circuit current density jsc based ...
We present a novel method to determine spatially resolved the dark saturation current of standard si...
A method for spatially resolved measurement of the minority carrier diffusion length in silicon wafe...
AbstractFor the extraction of spatially resolved solar cell parameters, a variety of methods has bee...
A variety of methods extracting spatially resolved information of solar cell parameters using lumine...
In this paper we give a mathematical derivation of how luminescence images of silicon solar cells ca...
In the scope of solar cell characterisation, spatially resolved imaging (SRI) methods (EL, PL and LB...
We present a novel method to determine spatially resolved the dark saturation current of standard si...
Luminescence imaging has found wide application for the characterization of silicon solar cells and ...
Luminescence images of silicon solar cells contain information about local recombination properties ...
We demonstrate a novel method to measure the lateral distribution of the recombination current witho...
All previous methods for quantitatively evaluating photoluminescence (PL) images of solar cells assu...
Spatially resolved luminescence images of silicon solar cells and wafers reveal information on quant...
AbstractRecently, several novel methods have been proposed to image short-circuit current density js...
This work presents a method for extracting the absolute local junction voltage of a-Si:H thin-film s...
Recently, several novel methods have been proposed to image short-circuit current density jsc based ...
We present a novel method to determine spatially resolved the dark saturation current of standard si...
A method for spatially resolved measurement of the minority carrier diffusion length in silicon wafe...