Optical properties of SnO2:F films deposited by atmospheric pressure CVD

SnO2 thin films, is compatible with industrial requirements such as high process speed, scaling to widesubstrate widths and low costs. Precise method for measuring the optical absorptance in the spectral range300–1700 nm combines transmittance, reflectance and photothermal deflection (PDS) spectra measured onthe same spot of the sample immersed in the transparent liquid with a relatively high index of refraction. Theeffects of the film thickness, doping gas addition and the susceptor temperature on the optical absorptanceand electrical resistivity of the TCO films are assessed. We show that the doping gas concentration and thesusceptor temperature influence both the incorporation ratio of dopants into SnO2 film as well as the defectconcentration. The SnO2 films growth at optimum APCVD conditions have thickness 0.7 μm, average surfaceroughness about 40 nm, sheet electrical resistance 10 Ω/sq and the optical absorption 1% at 500 nm andabout 5% at 1000 nm