Improved InGaAs/InAlAs photoconductive THz receivers: 5.8 THz bandwidth and 80 dB dynamic range

Photoconductive THz generation at 1.5 µm excitation in InGaAs/InAlAs structures with separated photoconductive and trapping layers

Dietz, R.J.B.
Gerhard, M.
Boettcher, J.
Kuenzel, H.
Koch, M.
Sartorius, B.
Schell, M.

January 2011

We present first results on photoconductive switches based on MBE grown InGaAs/InAlAs multi-nanolaye...

Optical characterization of GaAs photoconductive antennas for efficient generation and detection of Terahertz radiation

Venkatesh, M.
Rao, K. S.
Abhilash, T. S.
Tewari, S. P.
Chaudhary, A. K.

January 2014

We report the optical characterization of low temperature (LT)-GaAs and Semi Insulating (SI)-GaAs ba...

Mesa-Structured InGaAs/InAlAs Photoconductive Antennas for THz Time Domain Systems Operated at 1.5 micrometer

Dietz, R.J.B.
Röhle, H.
Hensel, H.J.
Böttcher, J.
Künzel, H.
Stanze, D.
Schell, M.
Sartorius, B.

January 2010

Mesa-structuring of InGaAs/InAlAs photoconductive layers has been employed for improving THz antenna...

70 dB signal-to-noise ratio at 3 THz using locally doped InGaAs-based photoconductive detectors

Kohlhaas, R.B.
Nellen, S.
Liebermeister, L.
Globisch, B.
Schell, M.

January 2017

This article investigates photoconductive THz detectors based on low-temperature-grown InGaAs/InAlAs...

Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range

Dietz, R.J.B.
Globisch, B.
Roehle, H.
Stanze, D.
Göbel, T.
Schell, M.

January 2014

We investigate the influence of Beryllium (Be) doping on the performance of photoconductive THz dete...

Improving photoconductive receivers for 1.5 µm CW THz systems

Stanze, D.
Roehle, H.
Dietz, R.J.B.
Hensel, H.J.
Schmidt, D.
Bach, H.-G.
Schell, M.
Sartorius, B.

January 2010

Implementation of interdigital electrodes and etching isolating trenches has improved InGaAs/InAlAs ...

Low temperature grown photoconductive antennas for pulsed 1060 nm excitation: Influence of excess energy on the electron relaxation

Dietz, Roman
Brahm, Anika
Velauthapillai, Ajanth
Wilms, Annika
Lammers, Christian
Globisch, Bernd
Koch, Martin
Notni, Gunther
Tünnermann, Andreas
Göbel, Thorsten
Schell, Martin

January 2015

We investigate properties of MBE grown photoconductive terahertz (THz) antennas based on the InGaAs/...

Bandwidth improvement of cw THz receivers by Be doping of low-temperature-grown InGaAs/InAlAs heterostructures

Globisch, B.
Stanze, D.
Dietz, R.J.B.
Göbel, T.
Schell, M.

January 2013

LTG InGaAs/InAlAs based cw THz receivers can be fine-tuned by Be doping, which is an advantage towar...

Low temperature grown be-doped InGaAs/InAlAs photoconductive antennas excited at 1030 nm

Dietz, R.J.B.
Wilk, R.
Globisch, B.
Roehle, H.
Stanze, D.
Ullrich, S.
Schumann, S.
Born, N.
Koch, M.
Sartorius, B.
Schell, M.

January 2013

We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/I...

Photoconductive antennas based on low temperature grown GaAs on silicon infstrates for broadband terahertz generation and detection

Klos, Matthias
Bartholdt, Richard
Klier, Jens
Lampin, Jean François
Beigang, René

January 2016

We present investigations of photoconductive antennas (PCA) based on low temperature grown GaAs (LT ...

Improving photoconductive THz antennas for 1.5 µm operation

Dietz, R.J.B.
Roehle, H.
Hensel, H.J.
Böttcher, J.
Künzel, H.
Stanze, D.
Schlak, M.
Schell, M.
Sartorius, B.

January 2010

Terahertz antennas for 1.5 m operation are improved by mesa-etching of the InGaAs/InAlAs photoconduc...

Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation

Takazato, Akihiro
Kamakura, Masahumi
Matsui, Takashi
Kitagawa, Jiro
Kadoya, Yutaka

March 2007

The authors have investigated the dc and terahertz-detection characteristics of the photoconductive ...

Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation

Takazato, Akihiro
Kamakura, Masahumi
Matsui, Takashi
Kitagawa, Jiro
Kadoya, Yutaka

March 2007

The authors have investigated the dc and terahertz-detection characteristics of the photoconductive ...

Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation

Takazato, Akihiro
Kamakura, Masahumi
Matsui, Takashi
Kitagawa, Jiro
Kadoya, Yutaka

March 2007

The authors have investigated the dc and terahertz-detection characteristics of the photoconductive ...

Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation

Takazato, Akihiro
Kamakura, Masahumi
Matsui, Takashi
Kitagawa, Jiro
Kadoya, Yutaka

March 2007

The authors have investigated the dc and terahertz-detection characteristics of the photoconductive ...

Photoconductive THz generation at 1.5 µm excitation in InGaAs/InAlAs structures with separated photoconductive and trapping layers

Dietz, R.J.B.
Gerhard, M.
Boettcher, J.
Kuenzel, H.
Koch, M.
Sartorius, B.
Schell, M.

January 2011

We present first results on photoconductive switches based on MBE grown InGaAs/InAlAs multi-nanolaye...

Optical characterization of GaAs photoconductive antennas for efficient generation and detection of Terahertz radiation

Venkatesh, M.
Rao, K. S.
Abhilash, T. S.
Tewari, S. P.
Chaudhary, A. K.

January 2014

We report the optical characterization of low temperature (LT)-GaAs and Semi Insulating (SI)-GaAs ba...

Mesa-Structured InGaAs/InAlAs Photoconductive Antennas for THz Time Domain Systems Operated at 1.5 micrometer

Dietz, R.J.B.
Röhle, H.
Hensel, H.J.
Böttcher, J.
Künzel, H.
Stanze, D.
Schell, M.
Sartorius, B.

January 2010

Mesa-structuring of InGaAs/InAlAs photoconductive layers has been employed for improving THz antenna...

70 dB signal-to-noise ratio at 3 THz using locally doped InGaAs-based photoconductive detectors

Kohlhaas, R.B.
Nellen, S.
Liebermeister, L.
Globisch, B.
Schell, M.

January 2017

This article investigates photoconductive THz detectors based on low-temperature-grown InGaAs/InAlAs...

Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range

Dietz, R.J.B.
Globisch, B.
Roehle, H.
Stanze, D.
Göbel, T.
Schell, M.

January 2014

We investigate the influence of Beryllium (Be) doping on the performance of photoconductive THz dete...

Improving photoconductive receivers for 1.5 µm CW THz systems

Stanze, D.
Roehle, H.
Dietz, R.J.B.
Hensel, H.J.
Schmidt, D.
Bach, H.-G.
Schell, M.
Sartorius, B.

January 2010

Implementation of interdigital electrodes and etching isolating trenches has improved InGaAs/InAlAs ...

Low temperature grown photoconductive antennas for pulsed 1060 nm excitation: Influence of excess energy on the electron relaxation

Dietz, Roman
Brahm, Anika
Velauthapillai, Ajanth
Wilms, Annika
Lammers, Christian
Globisch, Bernd
Koch, Martin
Notni, Gunther
Tünnermann, Andreas
Göbel, Thorsten
Schell, Martin

January 2015

We investigate properties of MBE grown photoconductive terahertz (THz) antennas based on the InGaAs/...

Bandwidth improvement of cw THz receivers by Be doping of low-temperature-grown InGaAs/InAlAs heterostructures

Globisch, B.
Stanze, D.
Dietz, R.J.B.
Göbel, T.
Schell, M.

January 2013

LTG InGaAs/InAlAs based cw THz receivers can be fine-tuned by Be doping, which is an advantage towar...

Low temperature grown be-doped InGaAs/InAlAs photoconductive antennas excited at 1030 nm

Dietz, R.J.B.
Wilk, R.
Globisch, B.
Roehle, H.
Stanze, D.
Ullrich, S.
Schumann, S.
Born, N.
Koch, M.
Sartorius, B.
Schell, M.

January 2013

We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/I...

Photoconductive antennas based on low temperature grown GaAs on silicon infstrates for broadband terahertz generation and detection

Klos, Matthias
Bartholdt, Richard
Klier, Jens
Lampin, Jean François
Beigang, René

January 2016

We present investigations of photoconductive antennas (PCA) based on low temperature grown GaAs (LT ...

Improving photoconductive THz antennas for 1.5 µm operation

Dietz, R.J.B.
Roehle, H.
Hensel, H.J.
Böttcher, J.
Künzel, H.
Stanze, D.
Schlak, M.
Schell, M.
Sartorius, B.

January 2010

Terahertz antennas for 1.5 m operation are improved by mesa-etching of the InGaAs/InAlAs photoconduc...

Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation

Takazato, Akihiro
Kamakura, Masahumi
Matsui, Takashi
Kitagawa, Jiro
Kadoya, Yutaka

March 2007

The authors have investigated the dc and terahertz-detection characteristics of the photoconductive ...

Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation

Takazato, Akihiro
Kamakura, Masahumi
Matsui, Takashi
Kitagawa, Jiro
Kadoya, Yutaka

March 2007

The authors have investigated the dc and terahertz-detection characteristics of the photoconductive ...

Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation

Takazato, Akihiro
Kamakura, Masahumi
Matsui, Takashi
Kitagawa, Jiro
Kadoya, Yutaka

March 2007

The authors have investigated the dc and terahertz-detection characteristics of the photoconductive ...

Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation

Takazato, Akihiro
Kamakura, Masahumi
Matsui, Takashi
Kitagawa, Jiro
Kadoya, Yutaka

March 2007

The authors have investigated the dc and terahertz-detection characteristics of the photoconductive ...

Photoconductive THz generation at 1.5 µm excitation in InGaAs/InAlAs structures with separated photoconductive and trapping layers

Dietz, R.J.B.
Gerhard, M.
Boettcher, J.
Kuenzel, H.
Koch, M.
Sartorius, B.
Schell, M.

January 2011

We present first results on photoconductive switches based on MBE grown InGaAs/InAlAs multi-nanolaye...

Optical characterization of GaAs photoconductive antennas for efficient generation and detection of Terahertz radiation

Venkatesh, M.
Rao, K. S.
Abhilash, T. S.
Tewari, S. P.
Chaudhary, A. K.

January 2014

We report the optical characterization of low temperature (LT)-GaAs and Semi Insulating (SI)-GaAs ba...

Mesa-Structured InGaAs/InAlAs Photoconductive Antennas for THz Time Domain Systems Operated at 1.5 micrometer

Dietz, R.J.B.
Röhle, H.
Hensel, H.J.
Böttcher, J.
Künzel, H.
Stanze, D.
Schell, M.
Sartorius, B.

January 2010

Mesa-structuring of InGaAs/InAlAs photoconductive layers has been employed for improving THz antenna...

Improved InGaAs/InAlAs photoconductive THz receivers: 5.8 THz bandwidth and 80 dB dynamic range

Abstract

Extracted data

Improved InGaAs/InAlAs photoconductive THz receivers: 5.8 THz bandwidth and 80 dB dynamic range

Abstract

Extracted data

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