Admittance-voltage profiling of Al(x)Ga(1-x)N/GaN heterostructures was used to determine the frequency dependent capacitance and conductance of FET devices in the frequency range from 50Hz to 1MHz. The nominally undoped low pressure metal-organic vapor-phase epitaxy structures were grown with an Al-content of 30%. An additional 1nm thick AlN interlayer was placed in one structure before the Al0.3Ga0.7N layer growth. For frequencies below 10(8) Hz it is convenient to use equivalent circuits to represent electric or dielectric properties of a material, a method widely used, for example, in impedance spectroscopy. We want to emphasize the relation between frequency dependent admittance-voltage profiling and the corresponding equivalent circuit...
Popular semiconductors currently being used for RF applications include GaAs and InP. The operating ...
With the rapid improvement of nitride semiconductor epitaxial growth technology, the precise and acc...
The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently...
In order to explain the experimental effect of interface states (N ss) and series resistance (Rs) of...
Electrical properties of AlxGa1-xN/GaN heterostructures with an Al content below 15% and carrier con...
Cataloged from PDF version of article.In order to explain the experimental effect of interface state...
AlN/AlGaN/GaN metal-insulator-semiconductor(MIS) structure is analyzed by using capacitance-frequenc...
During the past decade, AlGaN/GaN heterostructure field effect transistors (HFETs) have been the foc...
The main electrical parameters such as ideality factor (n), zero bias barrier height (Bo), series re...
During the past decade, AlGaN/GaN heterostructure field effect transistors (HFETs) have been the foc...
The profile of the interface state densities(N ss) and series resistances (R s) effect on capacitanc...
Cataloged from PDF version of article.The voltage (V) and frequency (f) dependence of dielectric cha...
The voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric consta...
Cataloged from PDF version of article.The profile of the interface state densities (N(ss)) and serie...
We present a systematic study on the admittance characterization of surface trap states in unpassiva...
Popular semiconductors currently being used for RF applications include GaAs and InP. The operating ...
With the rapid improvement of nitride semiconductor epitaxial growth technology, the precise and acc...
The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently...
In order to explain the experimental effect of interface states (N ss) and series resistance (Rs) of...
Electrical properties of AlxGa1-xN/GaN heterostructures with an Al content below 15% and carrier con...
Cataloged from PDF version of article.In order to explain the experimental effect of interface state...
AlN/AlGaN/GaN metal-insulator-semiconductor(MIS) structure is analyzed by using capacitance-frequenc...
During the past decade, AlGaN/GaN heterostructure field effect transistors (HFETs) have been the foc...
The main electrical parameters such as ideality factor (n), zero bias barrier height (Bo), series re...
During the past decade, AlGaN/GaN heterostructure field effect transistors (HFETs) have been the foc...
The profile of the interface state densities(N ss) and series resistances (R s) effect on capacitanc...
Cataloged from PDF version of article.The voltage (V) and frequency (f) dependence of dielectric cha...
The voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric consta...
Cataloged from PDF version of article.The profile of the interface state densities (N(ss)) and serie...
We present a systematic study on the admittance characterization of surface trap states in unpassiva...
Popular semiconductors currently being used for RF applications include GaAs and InP. The operating ...
With the rapid improvement of nitride semiconductor epitaxial growth technology, the precise and acc...
The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently...