Process variations and atomic-level fluctuations increasingly pose challenges to the design and analysis of integrated circuits by introducing variability. Although several approaches have been proposed to deal with the inherent statistical nature of circuit design, we consider them incomplete with two important aspects often being insufficiently addressed: 1) non-Gaussian distributions and 2) highly correlated parameters. To address these points, we propose a fully multivariate and non-Gaussian approach based on an arbitrary model. A subset of the model parameters is treated as a multidimensional random variable, which is represented by a combination of generalized lambda distributions and Spearman rank correlation matrices-a very general ...
This thesis describes the development and application of statistical circuit simulation methodologie...
The continuous scaling of physical dimensions has strongly increased circuit performance variability...
It is widely recognized that in nano-scale CMOS technology variation in themanufacturing process has...
Variability continues to pose challenges to integrated circuit design. With statistical static timin...
As feature sizes shrink, random fluctuations gain importance in semiconductor manufacturing and inte...
Since semiconductor structure sizes reached the regime of 100~nm and below, global and local process...
Durch Variationen im Herstellungsprozess und auf der atomaren Ebene schwanken die Kenngrößen integri...
Technology progress in IC manufacturing is characterized by decreasing the minimum feature sizes use...
In today's semiconductor technology, the size of a transistor is made smaller and smaller. One of th...
The various devices (transistors, resistors, etc.) in an integrated semiconductor circuit have very ...
A new model has been developed for the covariance matrix of device parameters. The analysis has been...
A new model has been developed for the covariance matrix of device parameters. The analysis has been...
It is well known that random fluctuations in integrated circuit manufacturing introduce variations i...
A new model has been developed for the covariance matrix of device parameters. The analysis has been...
The continuous scaling of physical dimensions has strongly increased circuit performance variability...
This thesis describes the development and application of statistical circuit simulation methodologie...
The continuous scaling of physical dimensions has strongly increased circuit performance variability...
It is widely recognized that in nano-scale CMOS technology variation in themanufacturing process has...
Variability continues to pose challenges to integrated circuit design. With statistical static timin...
As feature sizes shrink, random fluctuations gain importance in semiconductor manufacturing and inte...
Since semiconductor structure sizes reached the regime of 100~nm and below, global and local process...
Durch Variationen im Herstellungsprozess und auf der atomaren Ebene schwanken die Kenngrößen integri...
Technology progress in IC manufacturing is characterized by decreasing the minimum feature sizes use...
In today's semiconductor technology, the size of a transistor is made smaller and smaller. One of th...
The various devices (transistors, resistors, etc.) in an integrated semiconductor circuit have very ...
A new model has been developed for the covariance matrix of device parameters. The analysis has been...
A new model has been developed for the covariance matrix of device parameters. The analysis has been...
It is well known that random fluctuations in integrated circuit manufacturing introduce variations i...
A new model has been developed for the covariance matrix of device parameters. The analysis has been...
The continuous scaling of physical dimensions has strongly increased circuit performance variability...
This thesis describes the development and application of statistical circuit simulation methodologie...
The continuous scaling of physical dimensions has strongly increased circuit performance variability...
It is widely recognized that in nano-scale CMOS technology variation in themanufacturing process has...