In this paper we investigate the drain stress behavior and charge trapping phenomena of GaN-based high electron mobility transistors (HEMTs). We fabricated GaN-on-Si MIS-HEMTs with different dielectric stacks in the gate and gate drain access region and performed interface characterization and stress measurements for slow traps analysis. Our results show a high dependency of the on-resistance increase on interfaces in the gate-drain access region. The dielectric interfaces near the channel play a significant role for long term high voltage stress and regeneration of the device
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transis...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
In this paper, we investigate the effects of dc stress on GaN high-electron mobility transistors (HE...
In this paper we investigate the drain stress behavior and charge trapping phenomena of GaN-based hi...
We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN...
In this paper, the degradation of AlGaN/GaN high-electron mobility transistors (HEMTs) is investigat...
This paper reports an extensive analysis of the physical mechanisms responsible for the failure of G...
Semi-on DC stress experiments were conducted on AlGaN/GaN high electron mobility transistors (HEMTs)...
In this paper, we investigate the influence of the drain electrode on the dynamic switching behavior...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
In this work we report on the three dominant trapping mechanisms affecting the dynamic performance o...
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are promising for high-voltage, high-freq...
This research presents the characterization of interface traps of GaN High-ElectronMobility Transist...
High breakdown voltage and low on-state resistance make AlGaN/GaN High Electron Mobility Transistors...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transis...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
In this paper, we investigate the effects of dc stress on GaN high-electron mobility transistors (HE...
In this paper we investigate the drain stress behavior and charge trapping phenomena of GaN-based hi...
We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN...
In this paper, the degradation of AlGaN/GaN high-electron mobility transistors (HEMTs) is investigat...
This paper reports an extensive analysis of the physical mechanisms responsible for the failure of G...
Semi-on DC stress experiments were conducted on AlGaN/GaN high electron mobility transistors (HEMTs)...
In this paper, we investigate the influence of the drain electrode on the dynamic switching behavior...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
In this work we report on the three dominant trapping mechanisms affecting the dynamic performance o...
AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are promising for high-voltage, high-freq...
This research presents the characterization of interface traps of GaN High-ElectronMobility Transist...
High breakdown voltage and low on-state resistance make AlGaN/GaN High Electron Mobility Transistors...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transis...
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN-GaN HEMTs by comparin...
In this paper, we investigate the effects of dc stress on GaN high-electron mobility transistors (HE...