Redshift of the absorption onset and amplitude increase in the ultraviolet complex dielectric function (DF) of corundum-like α-(TixGa1-x)2O3 with increasing Ti content is presented. α-Ga2O3 thin film samples alloyed with Ti up to x = 0.61 are grown from plasma enhanced atomic layer deposition. They are characterized by ultraviolet spectroscopic ellipsometry, transmission electron microscopy, and x-ray photoelectron spectroscopy (XPS). The samples are shown to be crystalline up to x = 0.053. Ellipsometry is employed to obtain the ordinary complex DF, where the absorption onset shows a strong red shift with increasing Ti content as well as an increase in amplitude, which is associated with a successive take over of Ti related 3d-states in the...
The electronic structure near the band gap of the corundumlike a phase of Ga2O3 has been investigate...
Heterogeneous integration of β-(Sn xGa1− x)2O3 (TGO) UV-C photodetectors on silicon substrates by mo...
The PhD activity described in this Thesis was focused on the study of metal-oxide wide-bandgap mater...
Redshift of the absorption onset and amplitude increase in the ultraviolet complex dielectric functi...
The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the i...
The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the i...
Gallium oxide (Ga2O3) is a wide-band-gap semiconductor which has attracted much attention over the p...
The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the i...
The dielectric tensor of Ga2O3 in the monoclinic (β) phasewas determined by generalized spectroscopi...
Abstract We present a study of the electrical, structural and chemical properties of ...
Abstract: We present a study of the electrical, structural and chemical properties of Ti contacts on...
The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and p...
We determined the dielectric function of the alloy system (AlxGa1−x)2O3 by spectroscopic ellipsomet...
We use a combined generalized spectroscopic ellipsometry and density functional theory approach to d...
We determined the dielectric function of the alloy system (InxGa1−x)2O3 by spectroscopic ellipsomet...
The electronic structure near the band gap of the corundumlike a phase of Ga2O3 has been investigate...
Heterogeneous integration of β-(Sn xGa1− x)2O3 (TGO) UV-C photodetectors on silicon substrates by mo...
The PhD activity described in this Thesis was focused on the study of metal-oxide wide-bandgap mater...
Redshift of the absorption onset and amplitude increase in the ultraviolet complex dielectric functi...
The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the i...
The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the i...
Gallium oxide (Ga2O3) is a wide-band-gap semiconductor which has attracted much attention over the p...
The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the i...
The dielectric tensor of Ga2O3 in the monoclinic (β) phasewas determined by generalized spectroscopi...
Abstract We present a study of the electrical, structural and chemical properties of ...
Abstract: We present a study of the electrical, structural and chemical properties of Ti contacts on...
The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and p...
We determined the dielectric function of the alloy system (AlxGa1−x)2O3 by spectroscopic ellipsomet...
We use a combined generalized spectroscopic ellipsometry and density functional theory approach to d...
We determined the dielectric function of the alloy system (InxGa1−x)2O3 by spectroscopic ellipsomet...
The electronic structure near the band gap of the corundumlike a phase of Ga2O3 has been investigate...
Heterogeneous integration of β-(Sn xGa1− x)2O3 (TGO) UV-C photodetectors on silicon substrates by mo...
The PhD activity described in this Thesis was focused on the study of metal-oxide wide-bandgap mater...