: Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both experimentally and numerically. We develop a complete numerical model based on an 8-band k→·p→ method, including electromechanical fields, and calculate the optoelectronic properties of wurtzite AlGaAs nanowires with different Al content. We then compare them with our experimental data. Our results strongly suggest that wurtzite AlGaAs is a direct band gap material. Moreover, we have also numerically obtained the band gap of wurtzite AlAs and the valence band offset between AlAs and GaAs in the wurtzite symmetry
At ambient conditions, GaAs forms in the zincblende (ZB) phase with the notable exception of nanowir...
Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is...
Semiconductor nanowires are often regarded as having potential to be building blocks for novel appli...
: Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both expe...
III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende ...
Commercially available light-emitting diodes (LEDs) suffer from low-efficiency in the green region o...
Abstract. Recently, polytypism has been observed in nanowires in materials (e.g. GaAs) for which nor...
We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescenc...
The main challenge for light-emitting diodes is to increase the efficiency in the green part of the ...
The main challenge for light-emitting diodes is to increase the efficiency in the green part of the ...
Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible ...
Direct band-gap III-V semiconductors, emitting efficiently in the amber-green region of the visible ...
It has recently become possible to grow GaAs in the wurtzite crystal phase. This ability allows inte...
We present structural characterization of the wurtzite crystal structure of GaP nanowires, which wer...
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of...
At ambient conditions, GaAs forms in the zincblende (ZB) phase with the notable exception of nanowir...
Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is...
Semiconductor nanowires are often regarded as having potential to be building blocks for novel appli...
: Wurtzite AlGaAs is a technologically promising yet unexplored material. Here we study it both expe...
III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende ...
Commercially available light-emitting diodes (LEDs) suffer from low-efficiency in the green region o...
Abstract. Recently, polytypism has been observed in nanowires in materials (e.g. GaAs) for which nor...
We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescenc...
The main challenge for light-emitting diodes is to increase the efficiency in the green part of the ...
The main challenge for light-emitting diodes is to increase the efficiency in the green part of the ...
Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible ...
Direct band-gap III-V semiconductors, emitting efficiently in the amber-green region of the visible ...
It has recently become possible to grow GaAs in the wurtzite crystal phase. This ability allows inte...
We present structural characterization of the wurtzite crystal structure of GaP nanowires, which wer...
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of...
At ambient conditions, GaAs forms in the zincblende (ZB) phase with the notable exception of nanowir...
Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is...
Semiconductor nanowires are often regarded as having potential to be building blocks for novel appli...