p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6 µm electroluminescence of 0.4 mW at room temperature

Electroluminescence at an emission power of over 0.4 mW is achieved at an emission wavelength of 1.6 µm using a p-Si/beta-FeSi2/n-Si double-heterostructure light-emitting diode. This emission power is obtained at room temperature under current injection of 460 mA, corresponding to an external quantum efficiency of approximately 0.1%. Photoluminescence and time-resolved photoluminescence measurements for devices with different thicknesses of beta-FeSi2 indicate that radiative recombination rate increased as the thickness of the beta-FeSi2 active layer is increased