Compact Modeling of Ballistic Nanowire MOSFETs

Nanowire MOSFETs attract attention due to theprobable high performance and the excellent controllability ofdevice current. We present a compact model of ballistic nanowireMOSFET that aids our understanding of physics and the overallproperties of the device. The relationship between the gateoverdrive and the carrier density is derived and combined withthe current expression to yield the current–voltage (I–V ) characteristics.The subthreshold characteristics and the short channeleffect are also discussed. The effects of the quantum capacitanceon device characteristics are analyzed. The low-temperature expressionis also derived, and the relation to quantum conductanceis discussed. The I–V characteristics are numerically evaluatedand examined, employing a reported subband model. The drainandgate-bias dependences of device current are shown, and theeffects of the quantum capacitance and conductance on thesecharacteristics are indicated