The static value of the effective dielectric constant in a thin film capacitor is simulated by means of the local field theory. The value of it shows a sharp decrease as the film thickness is decreased in an ultrathin film geometry. This phenomenon is due to the size effect intrinsic to a thin film structure and has nothing to do with the material aspect. The decrease is more remarkable for larger values of the bulk dielectric constant. It is recovered by inserting interface layers with larger atomic polarizability between the film and the capacitor electrode
A new fundamental principle of the theory of dielectrics in capacitors is demonstrated. That is, die...
Capacitors are critical devices in microelectronic assemblies that must be incorporated into electro...
Effects of varying RF sputtering parameters on dielectric properties of Teflon thin film capacitor
We studied theoretically the influence of the progressive strain relaxation and the depolarizing-fie...
Thin-film metal-insulator-metal capacitors were fabricated with varying dielectric and electrode thi...
We present an analytical model to interpret nanoscale capacitance microscopy measurements on thin di...
2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films...
Capacitor ferroelectric structures are the basis of many modern microelectronic devices, including n...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. ...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
Abstract. The size effect in thin film sandwich structures is considered. Three types of boundary co...
We report on the electronic and optical properties of ultrathin granular films. We demonstrate that ...
Interdigitated electrodes (IDEs) on dielectric films is an important electrode design in electrical ...
A new fundamental principle of the theory of dielectrics in capacitors is demonstrated. That is, die...
Capacitors are critical devices in microelectronic assemblies that must be incorporated into electro...
Effects of varying RF sputtering parameters on dielectric properties of Teflon thin film capacitor
We studied theoretically the influence of the progressive strain relaxation and the depolarizing-fie...
Thin-film metal-insulator-metal capacitors were fabricated with varying dielectric and electrode thi...
We present an analytical model to interpret nanoscale capacitance microscopy measurements on thin di...
2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films...
Capacitor ferroelectric structures are the basis of many modern microelectronic devices, including n...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. ...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
Abstract. The size effect in thin film sandwich structures is considered. Three types of boundary co...
We report on the electronic and optical properties of ultrathin granular films. We demonstrate that ...
Interdigitated electrodes (IDEs) on dielectric films is an important electrode design in electrical ...
A new fundamental principle of the theory of dielectrics in capacitors is demonstrated. That is, die...
Capacitors are critical devices in microelectronic assemblies that must be incorporated into electro...
Effects of varying RF sputtering parameters on dielectric properties of Teflon thin film capacitor