The carbon vacancy is a dominant defect in 4H-SiC, and the "EI5" electron-paramagnetic-resonance (EPR) spectrum originates from positively charged carbon vacancies (VC+) at quasicubic sites. The observed state for EI5, however, has been attributed to a motional-averaged state with the C3v symmetry, and its true atomic structure has not been revealed so far. We here report low temperature (<40 K) EPR measurements on EI5 and show that this center has a C1h-symmetric structure due to Jahn-Teller distortion. We also performed ab inito calculations of the hyperfine tensors for EI5, and obtained a good agreement between experiment and theory in not only their principal values but also their principal axis directions. A good agreement was also de...
The carbon antisite-vacancy pair (CSiVC) in silicon carbide (SiC) has recently emerged as a promisin...
We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level trans...
In this paper, we unambiguously re-determine the spin multiplicity of TV2a by pulsed electron nucle...
Carbon vacancies (VC) are typical intrinsic defects in silicon carbides (SiC) and so far have been o...
The EI5 and EI6 centers are typical intrinsic defects in radiation-damaged and semi-insulating 4H-Si...
We present new results from electron paramagnetic resonance (EPR) studies of the EI4 EPR center in 4...
The isolated negatively charged silicon vacancy (VSi-) in the hexagonal lattices of 4H- and 6H-SiC ...
The carbon vacancy (VC) has been suggested by different studies to be involved in the Z1/Z2 defect-a...
The carbon vacancy in 4H-SiC is a powerful minority carrier recombination center in as-grown materia...
Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by...
Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V-C) in 4H-SiC and...
We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron-ir...
Photo-induced current transient spectroscopy (PICTS) and electron paramagnetic resonance (EPR) are u...
Photo-induced current transient spectroscopy (PICTS) and electron paramagnetic resonance (EPR) are u...
High purity silicon carbide (SiC) materials are of interest from high-power high temperature applica...
The carbon antisite-vacancy pair (CSiVC) in silicon carbide (SiC) has recently emerged as a promisin...
We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level trans...
In this paper, we unambiguously re-determine the spin multiplicity of TV2a by pulsed electron nucle...
Carbon vacancies (VC) are typical intrinsic defects in silicon carbides (SiC) and so far have been o...
The EI5 and EI6 centers are typical intrinsic defects in radiation-damaged and semi-insulating 4H-Si...
We present new results from electron paramagnetic resonance (EPR) studies of the EI4 EPR center in 4...
The isolated negatively charged silicon vacancy (VSi-) in the hexagonal lattices of 4H- and 6H-SiC ...
The carbon vacancy (VC) has been suggested by different studies to be involved in the Z1/Z2 defect-a...
The carbon vacancy in 4H-SiC is a powerful minority carrier recombination center in as-grown materia...
Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by...
Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V-C) in 4H-SiC and...
We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron-ir...
Photo-induced current transient spectroscopy (PICTS) and electron paramagnetic resonance (EPR) are u...
Photo-induced current transient spectroscopy (PICTS) and electron paramagnetic resonance (EPR) are u...
High purity silicon carbide (SiC) materials are of interest from high-power high temperature applica...
The carbon antisite-vacancy pair (CSiVC) in silicon carbide (SiC) has recently emerged as a promisin...
We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level trans...
In this paper, we unambiguously re-determine the spin multiplicity of TV2a by pulsed electron nucle...