Ion-beam shadowing effects have been measured for keV secondary electrons induced by protons, deuterons, and α particles in the energy range of 5.3–8.35 MeV/u, under various channeling conditions in Si, GaAs, and MgO crystals. From a comparison of the electron yields for protons and for the other projectiles of equal velocity, we have determined averaged numbers of the interstitial target electrons that suffer no shadowing effect. This method is useful for investigating the bond-electron distribution in a crystal lattice. Furthermore, the results for deuterons and α particles indicate that the quantum-mechanical diffraction of ions disappears in a series of small-angle scatterings by the aligned atoms, even when the Coulomb-scattering param...
International audienceIn view of possible future fixed target experiments requiring precisely steere...
We present results of the secondary electron emission coefficient γ from thin foi1 targets (2 to 25µ...
The dependence of secondary electron emission coefficient σ on the angle α of primary electron incid...
We have studied simple aspects of the energy spectra of ion-induced secondary electrons emitted from...
Ion-beam shadowing effects have been observed for secondary electrons induced by various ions in the...
Energy spectra of ion-induced secondary electrons emitted from Si and GaAs single crystals have been...
We have measured keV secondary electrons induced by 2.5- and 3.5-MeV/u ions under Si〈100〉 and Si〈110...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
The secondary electrons excited during fast charged particle irradiation of solids play a relevant r...
International audienceIn view of possible future fixed target experiments requiring precisely steere...
We present results of the secondary electron emission coefficient γ from thin foi1 targets (2 to 25µ...
The dependence of secondary electron emission coefficient σ on the angle α of primary electron incid...
We have studied simple aspects of the energy spectra of ion-induced secondary electrons emitted from...
Ion-beam shadowing effects have been observed for secondary electrons induced by various ions in the...
Energy spectra of ion-induced secondary electrons emitted from Si and GaAs single crystals have been...
We have measured keV secondary electrons induced by 2.5- and 3.5-MeV/u ions under Si〈100〉 and Si〈110...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
CASWe report observations of backward and forward electron emission by a thin silicon crystal target...
The secondary electrons excited during fast charged particle irradiation of solids play a relevant r...
International audienceIn view of possible future fixed target experiments requiring precisely steere...
We present results of the secondary electron emission coefficient γ from thin foi1 targets (2 to 25µ...
The dependence of secondary electron emission coefficient σ on the angle α of primary electron incid...