We present a simplified analysis of thermoelectric power of carriers in n-channel inversion layers on tetragonal materials under the limits of weak and strong electric field, in the presence of a parallel magnetic field, at low temperatures. Taking n-channel inversion layers of CdGeAs2 as an example, on the basis of a newly formulated 2D generalized electron energy spectra within the framework of k^→ p^→ formalism incorporating various anisotropies of the energy band constants, it is found that thermoelectric power increases with decreasing surface electric field for both limits in oscillatory manners which are totally band structure dependent. The crystal field splitting reduces its numerical values. The thermopower exhibits oscillatory in...
Abstract This paper employs the tight-binding model to investigate the thermal properties of tetrago...
Thermoelectric devices make it possible for direct energy conversion between heat and electricity. I...
The electronic and magnetotransport properties of conduction electrons in the grain boundary interfa...
We present a simplified analysis of thermoelectric power of carriers in n-channel inversion layers o...
We present a simplified theoretical formulation of the thermoelectric power (TP) under magnetic quan...
In this paper an attempt is made to study the thermoelectric power in quantum dots of non-parabolic ...
An attempt is made to study the gate capacitance of MOS structure of p-channel inversion layers on t...
An attempt is made to study the gate capacitance of MOS structure of p-channel inversion layers on t...
In this paper, we study the thermoelectric power under strong magnetic field (TPSM) in quantum dots ...
We study thermoelectric power under strong magnetic field (TPM) in carbon nanotubes (CNTs) and quant...
In this paper we report about the peculiarities of thermodynamic functions of quantum electron gas i...
We present a simple theoretical analysis of the carrier contribution to the second and third order e...
We study the thermoelectric power under classically large magnetic field (TPM) in ultrathin films ...
The kagome metal compounds AV3Sb5 (A = K, Rb, and Cs) feature a wealth of phenomena including nontri...
[[abstract]]This work reports measurements of the diagonal thermopower in several heterojunctions ba...
Abstract This paper employs the tight-binding model to investigate the thermal properties of tetrago...
Thermoelectric devices make it possible for direct energy conversion between heat and electricity. I...
The electronic and magnetotransport properties of conduction electrons in the grain boundary interfa...
We present a simplified analysis of thermoelectric power of carriers in n-channel inversion layers o...
We present a simplified theoretical formulation of the thermoelectric power (TP) under magnetic quan...
In this paper an attempt is made to study the thermoelectric power in quantum dots of non-parabolic ...
An attempt is made to study the gate capacitance of MOS structure of p-channel inversion layers on t...
An attempt is made to study the gate capacitance of MOS structure of p-channel inversion layers on t...
In this paper, we study the thermoelectric power under strong magnetic field (TPSM) in quantum dots ...
We study thermoelectric power under strong magnetic field (TPM) in carbon nanotubes (CNTs) and quant...
In this paper we report about the peculiarities of thermodynamic functions of quantum electron gas i...
We present a simple theoretical analysis of the carrier contribution to the second and third order e...
We study the thermoelectric power under classically large magnetic field (TPM) in ultrathin films ...
The kagome metal compounds AV3Sb5 (A = K, Rb, and Cs) feature a wealth of phenomena including nontri...
[[abstract]]This work reports measurements of the diagonal thermopower in several heterojunctions ba...
Abstract This paper employs the tight-binding model to investigate the thermal properties of tetrago...
Thermoelectric devices make it possible for direct energy conversion between heat and electricity. I...
The electronic and magnetotransport properties of conduction electrons in the grain boundary interfa...