A sign change of the org. magnetoresistance effect is obsd. as a function of temp. There is a large difference in the IV behavior when the sign of the magnetoresistance (MR) is pos. compared to when the sign of the MR is neg., pointing to the possibility that the sign change of the MR is due to a change in the charge transport mechanism. The pos. and neg. MRs show different characteristic field widths B0 in the MR vs. magnetic field curves. Also, the traces with pos. MR show a clear temp. dependence of B0 while no systematic dependence on temp. is seen in the traces with neg. MR. This behavior can be qual. explained by the recently proposed bipolaron model. (c) 2008 American Institute of Physics. [on SciFinder (R)
In this work we examine the transition between positive and negative organic magnetoresistance in po...
In this Letter, we explain the puzzling sign change of organic magnetoresistance in space-charge lim...
In this Letter, we explain the puzzling sign change of organic magnetoresistance in space-charge lim...
A sign change of the org. magnetoresistance effect is obsd. as a function of temp. There is a large ...
A sign change of the org. magnetoresistance effect is obsd. as a function of temp. There is a large ...
A sign change of the org. magnetoresistance effect is obsd. as a function of temp. There is a large ...
A sign change of the org. magnetoresistance effect is obsd. as a function of temp. There is a large ...
A sign change of the org. magnetoresistance effect is obsd. as a function of temp. There is a large ...
Recently there has been much interest in combining the fields of organic electronics and spintronics...
In recent years, it was discovered that the current through an organic semiconductor, sandwiched bet...
In recent years, it was discovered that the current through an organic semiconductor, sandwiched bet...
In this Letter, we explain the puzzling sign change of organic magnetoresistance in space-charge lim...
In this work we examine the transition between positive and negative organic magnetoresistance in po...
In this work we examine the transition between positive and negative organic magnetoresistance in po...
In this work we examine the transition between positive and negative organic magnetoresistance in po...
In this work we examine the transition between positive and negative organic magnetoresistance in po...
In this Letter, we explain the puzzling sign change of organic magnetoresistance in space-charge lim...
In this Letter, we explain the puzzling sign change of organic magnetoresistance in space-charge lim...
A sign change of the org. magnetoresistance effect is obsd. as a function of temp. There is a large ...
A sign change of the org. magnetoresistance effect is obsd. as a function of temp. There is a large ...
A sign change of the org. magnetoresistance effect is obsd. as a function of temp. There is a large ...
A sign change of the org. magnetoresistance effect is obsd. as a function of temp. There is a large ...
A sign change of the org. magnetoresistance effect is obsd. as a function of temp. There is a large ...
Recently there has been much interest in combining the fields of organic electronics and spintronics...
In recent years, it was discovered that the current through an organic semiconductor, sandwiched bet...
In recent years, it was discovered that the current through an organic semiconductor, sandwiched bet...
In this Letter, we explain the puzzling sign change of organic magnetoresistance in space-charge lim...
In this work we examine the transition between positive and negative organic magnetoresistance in po...
In this work we examine the transition between positive and negative organic magnetoresistance in po...
In this work we examine the transition between positive and negative organic magnetoresistance in po...
In this work we examine the transition between positive and negative organic magnetoresistance in po...
In this Letter, we explain the puzzling sign change of organic magnetoresistance in space-charge lim...
In this Letter, we explain the puzzling sign change of organic magnetoresistance in space-charge lim...