We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a GaAs/(AlGa)As resonant tunneling diode incorporating a layer of ring-shaped quantum dots (QDs) in the quantum well (QW). The dots give rise to a series of four unusual resonances in I(V) which show a high degree of reproducibility across the epitaxial wafer. By combining data for B parallel and perpendicular to the growth axis z, we identify that the unusual resonances arise from resonant tunneling into QD excited states with 2pz-like symmetry. The two series of magneto-oscillations in I for Bz allow us to determine the resonant charging and discharging of the QW with varying bias
Resonant tunneling injection is a key ingredient in achieving population inversion in a putative qua...
Tunneling between two quantum dots is studied at low temperatures. The quantum dots are formed by th...
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-t...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
Contains fulltext : 35691.pdf (publisher's version ) (Closed access
We investigate resonant tunnelling in GaAs/(AlGa)As double- barrier resonant-tunnelling diodes in w...
Resonant tunneling injection is a key ingredient in achieving population inversion in a putative qua...
Tunneling between two quantum dots is studied at low temperatures. The quantum dots are formed by th...
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-t...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
Contains fulltext : 35691.pdf (publisher's version ) (Closed access
We investigate resonant tunnelling in GaAs/(AlGa)As double- barrier resonant-tunnelling diodes in w...
Resonant tunneling injection is a key ingredient in achieving population inversion in a putative qua...
Tunneling between two quantum dots is studied at low temperatures. The quantum dots are formed by th...
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-t...