Near-infrared light-emitting ambipolar organic field-effect transistors

Near-IR light-emitting ambipolar OFETs are demonstrated, employing a squaraine deriv. as the electroactive layer. Efficient control of the emission-region position in the channel is achieved by varying the drain/gate potentials. By using a transport model, combined with exptl. results, strong metal-induced electroluminescence quenching is obsd. when light emission takes place in close proximity to the source-drain electrodes (see figure). [on SciFinder (R)