We present a theoretical and experimental study on the low-temperature electron mobilities due to ionized impurity scattering in a multisubband quasi-two-dimensional semiconductor system. The scattering rate is obtained from the solution the Lippmann-Schwinger equation in momentum space and the screening is considered within the random-phase approximation. A quantitative agreement is reached between the theoretical and experimental results for both the quantum and transport mobilities
Heterostructures of two-dimensional (2D) layered materials are increasingly being explored for elect...
We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby e...
We study the transport properties of quasi-two dimensional electrons confined to a modulation doped ...
We present a theoretical and experimental study on the low-temperature electron mobilities due to io...
In this paper we present measurements of both the quantum- and transport mobility in two populated s...
The electron transport properties of atomically thin semiconductors such as MoS_{2} have attracted s...
The effects due to intersubband coupling and screening on the ionized impurity scattering are studie...
In the proposed model of mobility, the time of electron–ion interaction equals the time taken by the...
The theory of mobility of a two-dimentional electron gas in JFET structures limited by polar-optic p...
We investigate the scattering of electrons in a quasi-two-dimensional electron gas at the AlGaAs/GaA...
ABSTRACT. In this paper the dependences are calculated between the relaxation period of electrons an...
We present a theoretical study on the electron mobility and scattering mechanism in a remotely doped...
Electron-electron interactions mediated by impurities are studied in several two-dimensional systems...
We present a theoretical study on the electron mobility and scattering mechanism in a remotely doped...
We present a theoretical study of electron mobility in heavily Si d-doped GaAs in the presence of ap...
Heterostructures of two-dimensional (2D) layered materials are increasingly being explored for elect...
We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby e...
We study the transport properties of quasi-two dimensional electrons confined to a modulation doped ...
We present a theoretical and experimental study on the low-temperature electron mobilities due to io...
In this paper we present measurements of both the quantum- and transport mobility in two populated s...
The electron transport properties of atomically thin semiconductors such as MoS_{2} have attracted s...
The effects due to intersubband coupling and screening on the ionized impurity scattering are studie...
In the proposed model of mobility, the time of electron–ion interaction equals the time taken by the...
The theory of mobility of a two-dimentional electron gas in JFET structures limited by polar-optic p...
We investigate the scattering of electrons in a quasi-two-dimensional electron gas at the AlGaAs/GaA...
ABSTRACT. In this paper the dependences are calculated between the relaxation period of electrons an...
We present a theoretical study on the electron mobility and scattering mechanism in a remotely doped...
Electron-electron interactions mediated by impurities are studied in several two-dimensional systems...
We present a theoretical study on the electron mobility and scattering mechanism in a remotely doped...
We present a theoretical study of electron mobility in heavily Si d-doped GaAs in the presence of ap...
Heterostructures of two-dimensional (2D) layered materials are increasingly being explored for elect...
We have studied the scattering process of AlGaAs/GaAs two-dimensional electron gas with the nearby e...
We study the transport properties of quasi-two dimensional electrons confined to a modulation doped ...