SiHx film growth precursors during high-rate nanocrystalline silicon deposition

The densities of the silane radicals Si, SiH, and SiH3 were measured in a remote SiH4 plasma for various H2 diln. ratios yielding amorphous and nanocryst. Si film growth. The measurements carried out under high deposition rate conditions of nanocryst. Si reveal typical densities of .apprx.1012 cm-3 for SiH3 and .apprx.1011 cm-3 for both Si and SiH. SiH3 is the dominant silane radical in the plasma for both amorphous and nanocryst. Si depositions although the importance of Si and SiH to film growth increases drastically when going from amorphous to nanocryst. materia